Inventor · disambiguated record
Vei-Han Chan
Also filed as: CHAN VEI-HAN
49 granted patents·3 pending applications·825 citations·filing 1997–2021
98Inventor score
Files withADVANCED MICRO DEVICES INC14APLUS FLASH TECHNOLOGY INC7MOSEL VITELIC INC7PROMOS TECHNOLOGIES INC5KORDUS II LOUIS CHARLES4
Top patents by PatentIndex Score
52 records- 0195US7511532B2Reconfigurable logic structuresCSWITCH CORP·Filed 2005·Granted Mar 31, 2009·58 cites·18 claims
- 0293US7122415B2Atomic layer deposition of interpoly oxides in a non-volatile memory devicePROMOS TECHNOLOGIES INC·Filed 2002·Granted Oct 17, 2006·67 cites·18 claims
- 0390US6660585B1Stacked gate flash memory cell with reduced disturb conditionsAPLUS FLASH TECHNOLOGY INC·Filed 2000·Granted Dec 9, 2003·48 cites·1 claims
- 0487US6562681B2Nonvolatile memories with floating gate spacers, and methods of fabricationMOSEL VITELIC INC·Filed 2001·Granted May 13, 2003·38 cites·32 claims
- 0586US6275415B1Multiple byte channel hot electron programming using ramped gate and source bias voltageADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·63 cites·24 claims
- 0684US6258668B1Array architecture and process flow of nonvolatile memory devices for mass storage applicationsAPLUS FLASH TECHNOLOGY INC·Filed 2000·Granted Jul 10, 2001·29 cites·14 claims
- 0782US8183551B2Multi-terminal phase change devicesKORDUS II LOUIS CHARLES·Filed 2005·Granted May 22, 2012·9 cites·22 claims
- 0881US6046932ACircuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROMADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 4, 2000·46 cites·12 claims
- 0980US6001713AMethods for forming nitrogen-rich regions in a floating gate and interpoly dielectric layer in a non-volatile semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 14, 1999·48 cites·11 claims
- 1079US7910429B2Method of forming ONO-type sidewall with reduced bird's beakPROMOS TECHNOLOGIES INC·Filed 2004·Granted Mar 22, 2011·28 cites·21 claims
- 1178US7494849B2Methods for fabricating multi-terminal phase change devicesCSWITCH INC·Filed 2005·Granted Feb 24, 2009·10 cites·18 claims
- 1277US8822967B2Multi-terminal phase change devicesKORDUS II LOUIS CHARLES·Filed 2012·Granted Sep 2, 2014·3 cites·20 claims
- 1377US5888867ANon-uniform threshold voltage adjustment in flash eproms through gate work function alterationADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 30, 1999·49 cites·14 claims
- 1475US6717846B1Non-volatile semiconductor memory having split-gate memory cells mirrored in a virtual ground configurationAPLUS FLASH TECHNOLOGY INC·Filed 2000·Granted Apr 6, 2004·18 cites·5 claims
- 1575US6570215B2Nonvolatile memories with floating gate spacers, and methods of fabricationMOSEL VITELIC INC·Filed 2002·Granted May 27, 2003·17 cites·18 claims
- 1674US8639952B1Field-programmable gate array having voltage identification capabilityCHAN VEI-HAN·Filed 2007·Granted Jan 28, 2014·9 cites·43 claims
- 1774US5856946AMemory cell programming with controlled current injectionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 5, 1999·35 cites·16 claims
- 1873US9923003B2CMOS image sensor with a reduced likelihood of an induced electric field in the epitaxial layerMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2015·Granted Mar 20, 2018·2 cites·20 claims
- 1972US11630245B2Micro lens sensor having micro lens heights that vary based on image heightMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 2071US6815760B2Nonvolatile memory structures and fabrication methodsMOSEL VITELIC INC·Filed 2002·Granted Nov 9, 2004·10 cites·12 claims
- 2170US7696018B2Methods for fabricating multi-terminal phase change devicesAGATE LOGIC INC·Filed 2008·Granted Apr 13, 2010·4 cites·6 claims
- 2270US6584018B2Nonvolatile memory structures and access methodsMOSEL VITELIC INC·Filed 2001·Granted Jun 24, 2003·15 cites·8 claims
- 2370US5972751AMethods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 26, 1999·24 cites·7 claims
- 2467US6787415B1Nonvolatile memory with pedestalsMOSEL VITELIC INC·Filed 2003·Granted Sep 7, 2004·13 cites·43 claims
- 2565US11079515B2Micro lens time-of-flight sensor having micro lens heights that vary based on image heightMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Granted Aug 3, 2021·0 cites·15 claims
- 2664US6989319B1Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 24, 2006·11 cites·12 claims
- 2764US6821847B2Nonvolatile memory structures and fabrication methodsMOSEL VITELIC INC·Filed 2001·Granted Nov 23, 2004·7 cites·35 claims
- 2864US6134150AErase condition for flash memoryAPLUS FLASH TECHNOLOGY INC·Filed 1999·Granted Oct 17, 2000·22 cites·13 claims
- 2963US7057231B2Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substratePROMOS TECHNOLOGIES INC·Filed 2004·Granted Jun 6, 2006·9 cites·29 claims
- 3061US6252276B1Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxideADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·16 cites·6 claims
- 3161US5875130AMethod for programming flash electrically erasable programmable read-only memoryADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 23, 1999·20 cites·33 claims
- 3260US8486745B2Multi-terminal phase change devicesKORDUS II LOUIS CHARLES·Filed 2007·Granted Jul 16, 2013·1 cites·19 claims
- 3357US6188604B1Flash memory cell & array with improved pre-program and erase characteristicsAMIC TECHNOLOGY INC·Filed 1998·Granted Feb 13, 2001·17 cites·31 claims
- 3455US8178380B2Method for selectively establishing an electrical connection in a multi-terminal phase change deviceKORDUS II LOUIS CHARLES·Filed 2009·Granted May 15, 2012·2 cites·20 claims
- 3555US6891221B2Array architecture and process flow of nonvolatile memory devices for mass storage applicationsAPLUS FLASH TECHNOLOGY INC·Filed 2004·Granted May 10, 2005·6 cites·4 claims
- 3654US7005338B2Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substratePROMOS TECHNOLOGIES INC·Filed 2002·Granted Feb 28, 2006·5 cites·39 claims
- 3754US6962848B2Nonvolatile memory structures and fabrication methodsPROMOS TECHNOLOGIES INC·Filed 2003·Granted Nov 8, 2005·4 cites·10 claims
- 3854US6025240AMethod and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 15, 2000·12 cites·25 claims
- 3952US11435476B2Time-of-flight RGB-IR image sensorMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2018·Granted Sep 6, 2022·0 cites·20 claims
- 4052US6674669B2Nonvolatile memory structures and access methodsMOSEL VITELIC INC·Filed 2002·Granted Jan 6, 2004·6 cites·15 claims
- 4151US6185133B1Flash EPROM using junction hot hole injection for eraseAMIC TECHNOLOGY INC·Filed 1998·Granted Feb 6, 2001·13 cites·41 claims
- 4250US8222917B2Impedance matching and trimming apparatuses and methods using programmable resistance devicesOLIVA ANTONIETTA·Filed 2006·Granted Jul 17, 2012·2 cites·38 claims
- 4349US7746682B2SEU hardened latches and memory cells using programmable resistance devicesAGATA LOGIC INC·Filed 2006·Granted Jun 29, 2010·3 cites·23 claims
- 4449US6262622B1Breakdown-free high voltage input circuitryAPLUS FLASH TECHNOLOGY INC·Filed 2000·Granted Jul 17, 2001·6 cites·15 claims
- 4548US7755389B2Reconfigurable logic structuresAGATE LOGIC INC·Filed 2009·Granted Jul 13, 2010·1 cites·26 claims
- 4648US2006008997A1Atomic layer deposition of interpoly oxides in a non-volatile memory deviceJANG CHUCK·Filed 2005·Application pending·0 cites
- 4743US6410956B1Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·1 cites·17 claims
- 4842US6103602AMethod and system for providing a drain side pocket implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 15, 2000·7 cites·6 claims
- 4939US6236596B1Biasing method and structure for reducing band-to-band and/or avalanche currents during the erase of flash memory devicesADVANCED MICRO DEVICES INC·Filed 1999·Granted May 22, 2001·6 cites·27 claims
- 5039US2004008561A1Stacked gate flash memory cell with reduced distrub conditionsAPLUS FLASH TECHNOLOGY INC·Filed 2003·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →