Inventor · disambiguated record
Veronique Sousa
Also filed as: SOUSA VERONIQUE
12 granted patents·1 pending application·46 citations·filing 2004–2013
88Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE5CYRILLE MARIE-CLAIRE1DELAET BERTRAND1DRESSLER CYRIL1PERNIOLA LUCA1
Top patents by PatentIndex Score
13 records- 0175US8759808B2Phase-change memory cellSTMICROELETRONICS CROLLES 2 SAS·Filed 2013·Granted Jun 24, 2014·7 cites·12 claims
- 0272US7876605B2Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic componentRWTH AACHEN·Filed 2004·Granted Jan 25, 2011·16 cites·24 claims
- 0366US7804704B2PMC memory with improved retention time and writing speedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Sep 28, 2010·6 cites·21 claims
- 0465US8098105B2Spin-valve or tunnel-junction radio-frequency oscillatorCYRILLE MARIE-CLAIRE·Filed 2009·Granted Jan 17, 2012·4 cites·12 claims
- 0563US8048713B2Process for manufacturing a CBRAM memory having enhanced reliabilityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Nov 1, 2011·3 cites·17 claims
- 0654US7279418B2Plastically deformable irreversible storage medium and method of producing one such mediumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Oct 9, 2007·6 cites·7 claims
- 0749US9082965B2Memory device and CBRAM memory with improved reliabilityDRESSLER CYRIL·Filed 2009·Granted Jul 14, 2015·1 cites·17 claims
- 0845US9018614B2Phase-change memory cellST MICROELECTRONICS CROLLES 2·Filed 2013·Granted Apr 28, 2015·0 cites·18 claims
- 0945US8148709B2Magnetic device with integrated magneto-resistive stackDELAET BERTRAND·Filed 2009·Granted Apr 3, 2012·2 cites·12 claims
- 1038US8021953B2Method for making PMC type memory cellsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted Sep 20, 2011·0 cites·6 claims
- 1137US7833822B2Method for making PMC type memory cellsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Nov 16, 2010·0 cites·8 claims
- 1227US2012307552A1Process of producing a resistivity-change memory cell intended to function in a high-temperature environmentPERNIOLA LUCA·Filed 2011·Application pending·0 cites
- 1325US8232542B2Phase change memory element with improved cyclabilitySOUSA VERONIQUE·Filed 2004·Granted Jul 31, 2012·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →