Inventor · disambiguated record
Viju K. Mathews
Also filed as: MATHEWS VIJU · MATHEWS VIJU K
47 granted patents·1,438 citations·filing 1991–2007
98Inventor score
Top patents by PatentIndex Score
47 records- 0198US5278091AProcess to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage nodeMICRON SEMICONDUCTOR INC·Filed 1993·Granted Jan 11, 1994·178 cites·40 claims
- 0293US5362632ABarrier process for Ta2 O5 capacitorMICRON SEMICONDUCTOR INC·Filed 1994·Granted Nov 8, 1994·100 cites·16 claims
- 0393US5358894AOxidation enhancement in narrow masked field regions of a semiconductor waferMICRON TECHNOLOGY INC·Filed 1993·Granted Oct 25, 1994·114 cites·9 claims
- 0493US5202278AMethod of forming a capacitor in semiconductor wafer processingMICRON TECHNOLOGY INC·Filed 1991·Granted Apr 13, 1993·126 cites·24 claims
- 0592US5354705ATechnique to fabricate a container structure with rough inner and outer surfacesMICRON SEMICONDUCTOR INC·Filed 1993·Granted Oct 11, 1994·97 cites·38 claims
- 0688US6030847AMethod for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 29, 2000·75 cites·17 claims
- 0786US5445999AAdvanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridationMICRON TECHNOLOGY INC·Filed 1992·Granted Aug 29, 1995·93 cites·18 claims
- 0886US5393683AMethod of making semiconductor devices having two-layer gate structureMICRON TECHNOLOGY INC·Filed 1992·Granted Feb 28, 1995·67 cites·19 claims
- 0985US5278085ASingle mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor deviceMICRON SEMICONDUCTOR INC·Filed 1992·Granted Jan 11, 1994·103 cites·22 claims
- 1080US5637514AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1995·Granted Jun 10, 1997·40 cites·21 claims
- 1173US6211078B1Method of improving resist adhesion for use in patterning conductive layersMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 3, 2001·36 cites·28 claims
- 1273US5658829ASemiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 19, 1997·33 cites·8 claims
- 1370US7153707B2Method for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 26, 2006·10 cites·17 claims
- 1470US6791131B1Method for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 14, 2004·10 cites·30 claims
- 1570US5580821ASemiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 3, 1996·40 cites·15 claims
- 1667US7253052B2Method for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 7, 2007·8 cites·12 claims
- 1767US5208479AMethod of increasing capacitance of polycrystalline silicon devices by surface roughening and polycrystalline silicon devicesMICRON TECHNOLOGY INC·Filed 1992·Granted May 4, 1993·43 cites·25 claims
- 1865US5756390AModified LOCOS process for sub-half-micron technologyMICRON TECHNOLOGY INC·Filed 1996·Granted May 26, 1998·31 cites·44 claims
- 1961US5726092ASemiconductor processing methods of forming field oxidation regions on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 10, 1998·27 cites·11 claims
- 2060US5837378AMethod of reducing stress-induced defects in siliconMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 17, 1998·25 cites·13 claims
- 2160US5702986ALow-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edgesMICRON TECHNOLOGY INC·Filed 1995·Granted Dec 30, 1997·25 cites·20 claims
- 2260US5393694AAdvanced process for recessed poly buffered locosMICRON SEMICONDUCTOR INC·Filed 1994·Granted Feb 28, 1995·27 cites·20 claims
- 2357US5259924AIntegrated circuit fabrication process to reduce critical dimension loss during etchingMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 9, 1993·27 cites·9 claims
- 2455US5798280AProcess for doping hemispherical grain siliconMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 25, 1998·19 cites·17 claims
- 2553US7393753B2Method for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2007·Granted Jul 1, 2008·0 cites·26 claims
- 2651US7398595B2Method for forming a storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 15, 2008·0 cites·9 claims
- 2751US7385240B2Storage cell capacitor compatible with high dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 10, 2008·0 cites·32 claims
- 2851US6429525B2Interconnect structure having improved resist adhesionMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 6, 2002·2 cites·21 claims
- 2951US5933754ASemiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 3, 1999·13 cites·1 claims
- 3045USRE36786EProcess to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage nodeMICRON TECHNOLOGY INC·Filed 1996·Granted Jul 18, 2000·8 cites·42 claims
- 3145US5902128AProcess to improve the flow of oxide during field oxidation by fluorine dopingMICRON TECHNOLOGY INC·Filed 1996·Granted May 11, 1999·8 cites·25 claims
- 3243US5895268AHigh pressure nitridation of tungstenMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 20, 1999·10 cites·28 claims
- 3342US6762475B2Semiconductor wafer isolation structure formed by field oxidationMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 13, 2004·0 cites·15 claims
- 3440US6611038B2Semiconductor wafer isolation structure formed by field oxidationMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 26, 2003·0 cites·12 claims
- 3540US6465326B2Methods of forming field oxide and active area regions on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 15, 2002·0 cites·4 claims
- 3640US6025236AMethods of forming field oxide and active area regions on a semiconductive substrateMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 15, 2000·6 cites·1 claims
- 3740US5930647AMethods of forming field oxide and active area regions on a semiconductive substrateMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 27, 1999·6 cites·32 claims
- 3839US6365490B1Process to improve the flow of oxide during field oxidation by fluorine dopingMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 2, 2002·5 cites·27 claims
- 3937US5940692AMethod of forming a field effect transistorMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 17, 1999·4 cites·9 claims
- 4037US5891788ALocus isolation technique using high pressure oxidation (hipox) and protective spacersMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 6, 1999·6 cites·17 claims
- 4135US6245644B1Methods of forming field oxide and active area regions on a semiconductive substrateMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 12, 2001·3 cites·8 claims
- 4234US6835634B1Streamlined field isolation processMICRON TECHNOLOGY INC·Filed 1998·Granted Dec 28, 2004·3 cites·11 claims
- 4334US6245671B1Semiconductor processing method of forming an electrically conductive contact plugMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 12, 2001·3 cites·9 claims
- 4432US6156612AMethods of forming field oxide and active area regions on a semiconductive substrateMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 5, 2000·1 cites·10 claims
- 4532US5994203AProcess for stress reduction in silicon during field isolationMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 30, 1999·2 cites·26 claims
- 4632US5674776ASemiconductor processing methods of forming field oxidation regions on a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1995·Granted Oct 7, 1997·3 cites·20 claims
- 4731US5897356AMethods of forming field oxide and active area regions on a semiconductive substrateMICRON TECHNOLOGY INC·Filed 1997·Granted Apr 27, 1999·1 cites·36 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →