Inventor · disambiguated record
Vipindas Pala
Also filed as: PALA VIPINDAS
43 granted patents·8 pending applications·144 citations·filing 2013–2023
97Inventor score
Files withCREE INC25MONOLITHIC POWER SYSTEMS INC13ALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD4MAXIM INTEGRATED PRODUCTS4WOLFSPEED INC2
Top patents by PatentIndex Score
51 records- 0196US9768259B2Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channelingCREE INC·Filed 2014·Granted Sep 19, 2017·20 cites·22 claims
- 0293US11682722B2Vertical transistor structure with buried channel and resurf regions and method of manufacturing the sameMONOLITHIC POWER SYSTEMS INC·Filed 2021·Granted Jun 20, 2023·2 cites·16 claims
- 0393US11075264B2Super junction power semiconductor devices formed via ion implantation channeling techniques and related methodsCREE INC·Filed 2016·Granted Jul 27, 2021·8 cites·21 claims
- 0493US9142668B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2013·Granted Sep 22, 2015·11 cites·12 claims
- 0592US9741842B2Vertical power transistor deviceCREE INC·Filed 2016·Granted Aug 22, 2017·6 cites·20 claims
- 0692US9484413B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2014·Granted Nov 1, 2016·9 cites·19 claims
- 0792US9318597B2Layout configurations for integrating schottky contacts into a power transistor deviceCREE INC·Filed 2013·Granted Apr 19, 2016·15 cites·10 claims
- 0891US11088688B2Configurations of composite devices comprising of a normally-on FET and a normally-off FETLOGISIC DEVICES INC·Filed 2019·Granted Aug 10, 2021·14 cites·18 claims
- 0989US10950695B1Silicon carbide planar MOSFET with wave-shaped channel regionsGLOBAL POWER TECH GROUP INC·Filed 2019·Granted Mar 16, 2021·12 cites·20 claims
- 1089US10784338B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2018·Granted Sep 22, 2020·3 cites·20 claims
- 1189US9331197B2Vertical power transistor deviceCREE INC·Filed 2013·Granted May 3, 2016·7 cites·25 claims
- 1287US10217824B2Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channelingCREE INC·Filed 2017·Granted Feb 26, 2019·3 cites·31 claims
- 1385USRE49913EVertical power transistor deviceWOLFSPEED INC·Filed 2020·Granted Apr 9, 2024·1 cites·38 claims
- 1484US9972677B2Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewallsCREE INC·Filed 2016·Granted May 15, 2018·3 cites·20 claims
- 1584US9306061B2Field effect transistor devices with protective regionsCREE INC·Filed 2013·Granted Apr 5, 2016·7 cites·14 claims
- 1683US9515199B2Power semiconductor devices having superjunction structures with implanted sidewallsCREE INC·Filed 2015·Granted Dec 6, 2016·3 cites·20 claims
- 1782US10134834B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2016·Granted Nov 20, 2018·2 cites·17 claims
- 1881US11195909B2LDMOS transistors with breakdown voltage clampsMAXIM INTEGRATED PRODUCTS·Filed 2019·Granted Dec 7, 2021·2 cites·14 claims
- 1980US9425265B2Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structureCREE INC·Filed 2013·Granted Aug 23, 2016·4 cites·14 claims
- 2079US11245016B2Silicon carbide trench semiconductor deviceALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2020·Granted Feb 8, 2022·1 cites·19 claims
- 2177USRE48380EVertical power transistor deviceCREE INC·Filed 2018·Granted Jan 5, 2021·1 cites·32 claims
- 2276US2024055473A1Semiconductor device with integrated junction field effect transistor and associated manufacturing methodMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2376US2024055511A1Semiconductor device with integrated junction field effect transistor and associated manufacturing methodMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2476US2024055513A1Semiconductor device with integrated junction field effect transistor and associated manufacturing methodMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2576US2024055512A1Semiconductor device with integrated junction field effect transistor and associated manufacturing methodMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2674US9111919B2Field effect device with enhanced gate dielectric structureCREE INC·Filed 2013·Granted Aug 18, 2015·3 cites·29 claims
- 2773US10950719B2Seminconductor device with spreading layerCREE INC·Filed 2014·Granted Mar 16, 2021·2 cites·26 claims
- 2873US10818662B2Silicon carbide MOSFET with source ballastingALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2018·Granted Oct 27, 2020·1 cites·9 claims
- 2972US11869982B2Single sided channel mesa power junction field effect transistorMONOLITHIC POWER SYSTEMS INC·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 3072US9570585B2Field effect transistor devices with buried well protection regionsCREE INC·Filed 2015·Granted Feb 14, 2017·1 cites·13 claims
- 3171US9064738B2Methods of forming junction termination extension edge terminations for high power semiconductor devices and related semiconductor devicesCREE INC·Filed 2013·Granted Jun 23, 2015·2 cites·25 claims
- 3269US11557588B2Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layerMAXIM INTEGRATED PRODUCTS·Filed 2021·Granted Jan 17, 2023·0 cites·12 claims
- 3368US11791378B2Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methodsWOLFSPEED INC·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 3468US11705485B2LDMOS transistors with breakdown voltage clampsMAXIM INTEGRATED PRODUCTS·Filed 2021·Granted Jul 18, 2023·0 cites·7 claims
- 3565US11545585B2Single sided channel mesa power junction field effect transistorMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Jan 3, 2023·0 cites·13 claims
- 3663US11521965B2Junction field effect transistor with integrated high voltage capacitorMONOLITHIC POWER SYSTEMS INC·Filed 2021·Granted Dec 6, 2022·0 cites·7 claims
- 3761US12283482B2Thin wafer process for improved crystal utilization of wide bandgap devicesMONOLITHIC POWER SYSTEMS INC·Filed 2022·Granted Apr 22, 2025·0 cites·20 claims
- 3861US11552078B2Silicon carbide MOSFET with source ballastingALPHA & OMEGA SEMICONDUCTOR CAYMAN LTD·Filed 2020·Granted Jan 10, 2023·0 cites·9 claims
- 3960US9236433B2Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layerCREE INC·Filed 2013·Granted Jan 12, 2016·1 cites·25 claims
- 4059US12206028B2Single sided channel mesa power junction field effect transistorMONOLITHIC POWER SYSTEMS INC·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 4159US10964694B2Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layerMAXIM INTEGRATED PRODUCTS·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 4258US10103230B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2016·Granted Oct 16, 2018·0 cites·12 claims
- 4356US2024055514A1Semiconductor device with integrated junction field effect transistor and associated manufacturing methodMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 4455US11605713B2Silicon carbide planar MOSFET with wave-shaped channel regionsSEMIQ INCORPORATED·Filed 2021·Granted Mar 14, 2023·0 cites·18 claims
- 4554US10868169B2Monolithically integrated vertical power transistor and bypass diodeCREE INC·Filed 2013·Granted Dec 15, 2020·0 cites·12 claims
- 4654US2024072160A1Semiconductor device with trench structures and method for manufacturing sameMONOLITHIC POWER SYSTEMS INC·Filed 2023·Application pending·0 cites
- 4749US11211484B2Vertical transistor structure with buried channel and resurf regions and method of manufacturing the sameMONOLITHIC POWER SYSTEMS INC·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 4843US10600903B2Semiconductor device including a power transistor device and bypass diodeCREE INC·Filed 2013·Granted Mar 24, 2020·0 cites·11 claims
- 4942US2015084063A1Semiconductor device with a current spreading layerCREE INC·Filed 2014·Application pending·0 cites
- 5041US2015263145A1Igbt structure for wide band-gap semiconductor materialsCREE INC·Filed 2014·Application pending·0 cites
Showing the top 50 of 51 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Vipindas Pala files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →