Inventor · disambiguated record
Vincent Reboud
Also filed as: REBOUD VINCENT
18 granted patents·5 pending applications·19 citations·filing 2012–2024
89Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE21COMMISSARIAT À L EN ATOMIQUE ET AUX EN ALTERNATIVES1COMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES1
Top patents by PatentIndex Score
23 records- 0190US9632032B2Method for manufacturing a substrate for surface-enhanced Raman spectographyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Apr 25, 2017·5 cites·18 claims
- 0285US11251339B2Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 15, 2022·2 cites·11 claims
- 0384US10490976B2Laser source with a germanium-based suspended membrane and an integrated waveguide that participates in forming the optical cavityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Nov 26, 2019·3 cites·14 claims
- 0481US10411434B2Semiconductor structure comprising a tensilely stressed suspended membrane including an optical cavityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Sep 10, 2019·3 cites·12 claims
- 0574US9236540B2Light-emitting diode with local photonic crystalsCOMMISSARIAT À L EN ATOMIQUE ET AUX EN ALTERNATIVES·Filed 2014·Granted Jan 12, 2016·2 cites·12 claims
- 0670US9774167B2Method of production of a semiconducting structure comprising a strained portionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Sep 26, 2017·2 cites·15 claims
- 0767US10666019B2Semiconductor structure including a suspended membrane containing a central segment of structured thicknessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted May 26, 2020·1 cites·13 claims
- 0866US10699902B2Process for producing a strained layer based on germanium-tinCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jun 30, 2020·1 cites·14 claims
- 0964US2025183617A1Method for manufacturing an optoelectronic device comprising an intermetallic compoundCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1061US2014326893A1Imager of an isotropic light source exhibiting enhanced detection efficiencyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Application pending·0 cites
- 1161US2014327098A1Method of producing a radiation imager exhibiting improved detection efficiencyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Application pending·0 cites
- 1260US12244119B2Laser comprising a distributed Bragg mirror and production method thereofCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 4, 2025·0 cites·18 claims
- 1360US11942328B2Method of making a distributed Bragg mirrorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 26, 2024·0 cites·11 claims
- 1449US12040595B2Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier regionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jul 16, 2024·0 cites·9 claims
- 1545US9784684B2Method for manufacturing a substrate for surface-enhanced Raman spectography and substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Oct 10, 2017·0 cites·17 claims
- 1643US11165225B2Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axisCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 2, 2021·0 cites·9 claims
- 1743US9502864B2Device comprising a strained germanium membraneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Nov 22, 2016·0 cites·20 claims
- 1841US9933354B2Method for manufacturing a substrate for surface-enhanced raman spectography and substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Apr 3, 2018·0 cites·15 claims
- 1941US2020144443A1Method for producing a photodiode and photodiodeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Application pending·0 cites
- 2040US10944235B2Method for producing a light source and light sourceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Mar 9, 2021·0 cites·23 claims
- 2140US2014110591A1Device for characterizing an ionizing radiationCOMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES·Filed 2013·Application pending·0 cites
- 2235US9735317B2Method for forming a semiconducting portion by epitaxial growth on a strained portionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Aug 15, 2017·0 cites·15 claims
- 2330US10739583B2Method for obtaining at least one structure approximating a sought structure by reflowCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Aug 11, 2020·0 cites·21 claims
Join the waitlist — get patent alerts
Get an alert when Vincent Reboud files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →