Inventor · disambiguated record
Vignesh Sundar
Also filed as: SUNDAR VIGNESH
42 granted patents·4 pending applications·108 citations·filing 2017–2025
97Inventor score
Top patents by PatentIndex Score
46 records- 0198US11417835B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·5 cites·20 claims
- 0297US10797225B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·10 cites·33 claims
- 0396US10665773B2Nitride capping layer for spin torque transfer (STT)-magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·7 cites·20 claims
- 0496US10522746B1Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·16 cites·20 claims
- 0595US11818961B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·2 cites·20 claims
- 0695US9935261B1Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputteringHEADWAY TECH INC·Filed 2017·Granted Apr 3, 2018·14 cites·24 claims
- 0794US10516100B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·8 cites·20 claims
- 0892US10950782B2Nitride diffusion barrier structure for spintronic applicationsHEADWAY TECH INC·Filed 2019·Granted Mar 16, 2021·4 cites·17 claims
- 0992US10622047B2Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 14, 2020·3 cites·20 claims
- 1091US10297746B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·5 cites·13 claims
- 1190US11444241B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 1289US11696511B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 1389US10522749B2Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·5 cites·19 claims
- 1487US10115892B2Multilayer structure for reducing film roughness in magnetic devicesHEADWAY TECH INC·Filed 2017·Granted Oct 30, 2018·2 cites·7 claims
- 1586US11430945B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·4 cites·20 claims
- 1685US12207566B2MTJ device performance by adding stress modulation layer to MTJ device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1785US10868237B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive R-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·4 cites·20 claims
- 1885US10522745B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·3 cites·20 claims
- 1982US11785864B2MTJ device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·19 claims
- 2081US12501836B2Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 2180US10797232B2Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·3 cites·20 claims
- 2279US12245516B2Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2379US11903324B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2479US11849646B2Nitride capping layer for spin torque transfer (STT) magnetoresistive random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 2579US2025176438A1Self-aligned encapsulation hard mask to separate physically under-etched mtj cells to reduce conductive re-depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2678US11043632B2Ion beam etching process design to minimize sidewall re-depositionHEADWAY TECH INC·Filed 2019·Granted Jun 22, 2021·2 cites·8 claims
- 2778US11031548B2Reduce intermixing on MTJ sidewall by oxidationHEADWAY TECH INC·Filed 2019·Granted Jun 8, 2021·2 cites·19 claims
- 2878US2025169373A1Mtj device performance by adding stress modulation layer to mtj device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2978US2025338775A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3076US12185641B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 3175US12027191B2Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
- 3275US10475987B1Method for fabricating a magnetic tunneling junction (MTJ) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·15 claims
- 3372US12310245B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 3472US11424405B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 3571US12082509B2Dual magnetic tunnel junction (DMTJ) stack designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 3, 2024·0 cites·20 claims
- 3671US10784310B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devicesHEADWAY TECH INC·Filed 2018·Granted Sep 22, 2020·2 cites·41 claims
- 3770US12356865B2Multilayer structure for reducing film roughness in magnetic devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 8, 2025·0 cites·20 claims
- 3870US11087810B2Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 3969US11289645B2Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologiesHEADWAY TECH INC·Filed 2018·Granted Mar 29, 2022·1 cites·13 claims
- 4067US2019088866A1Multilayer Structure for Reducing Film Roughness in Magnetic DevicesHEADWAY TECH INC·Filed 2018·Application pending·0 cites
- 4165US11411174B2Silicon oxynitride based encapsulation layer for magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·0 cites·20 claims
- 4265US10700269B2Post treatment to reduce shunting devices for physical etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·0 cites·20 claims
- 4364US11631802B2Etching and encapsulation scheme for magnetic tunnel junction fabricationHEADWAY TECH INC·Filed 2019·Granted Apr 18, 2023·0 cites·9 claims
- 4463US11316103B2Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·19 claims
- 4557US11956971B2Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 4655US11495738B2Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 8, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →