Inventor · disambiguated record
Victor A. K. Temple
Also filed as: TEMPLE VICTOR · TEMPLE VICTOR A · TEMPLE VICTOR A K · TEMPLE VICTOR ALBERT KEITH
84 granted patents·3 pending applications·3,561 citations·filing 1975–2019
99Inventor score
Top patents by PatentIndex Score
87 records- 0199US4941026ASemiconductor devices exhibiting minimum on-resistanceGEN ELECTRIC·Filed 1988·Granted Jul 10, 1990·522 cites·63 claims
- 0298US6153495AAdvanced methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Nov 28, 2000·516 cites·83 claims
- 0397US4821095AInsulated gate semiconductor device with extra short grid and method of fabricationGEN ELECTRIC·Filed 1987·Granted Apr 11, 1989·178 cites·16 claims
- 0495US5082795AMethod of fabricating a field effect semiconductor device having a self-aligned structureGEN ELECTRIC·Filed 1988·Granted Jan 21, 1992·114 cites·9 claims
- 0595US4417385AProcesses for manufacturing insulated-gate semiconductor devices with integral shortsGEN ELECTRIC·Filed 1982·Granted Nov 29, 1983·117 cites·35 claims
- 0694US4242690AHigh breakdown voltage semiconductor deviceGEN ELECTRIC·Filed 1978·Granted Dec 30, 1980·64 cites·17 claims
- 0793US4644637AMethod of making an insulated-gate semiconductor device with improved shorting regionGEN ELECTRIC·Filed 1983·Granted Feb 24, 1987·69 cites·16 claims
- 0892US4927772AMethod of making high breakdown voltage semiconductor deviceGEN ELECTRIC·Filed 1989·Granted May 22, 1990·136 cites·13 claims
- 0989US6274892B1Devices formable by low temperature direct bondingINTERSIL INC·Filed 1998·Granted Aug 14, 2001·101 cites·10 claims
- 1088US4620211AMethod of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devicesGEN ELECTRIC·Filed 1984·Granted Oct 28, 1986·71 cites·7 claims
- 1188US4466176AProcess for manufacturing insulated-gate semiconductor devices with integral shortsGEN ELECTRIC·Filed 1983·Granted Aug 21, 1984·70 cites·22 claims
- 1287US5532635AVoltage clamp circuit and methodHARRIS CORP·Filed 1994·Granted Jul 2, 1996·62 cites·24 claims
- 1385US4648174AMethod of making high breakdown voltage semiconductor deviceGEN ELECTRIC·Filed 1985·Granted Mar 10, 1987·80 cites·10 claims
- 1485US4165517ASelf-protection against breakover turn-on failure in thyristors through selective base lifetime controlELECTRIC POWER RES INST·Filed 1977·Granted Aug 21, 1979·45 cites·7 claims
- 1584US6194290B1Methods for making semiconductor devices by low temperature direct bondingINTERSIL CORP·Filed 1998·Granted Feb 27, 2001·74 cites·35 claims
- 1684US4646117APower semiconductor devices with increased turn-off current ratings and limited current density in peripheral portionsGEN ELECTRIC·Filed 1984·Granted Feb 24, 1987·37 cites·20 claims
- 1783US5103290AHermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chipGEN ELECTRIC·Filed 1989·Granted Apr 7, 1992·62 cites·42 claims
- 1881US4904609AMethod of making symmetrical blocking high voltage breakdown semiconductor deviceGEN ELECTRIC·Filed 1988·Granted Feb 27, 1990·56 cites·13 claims
- 1981US4816892ASemiconductor device having turn-on and turn-off capabilitiesGEN ELECTRIC·Filed 1987·Granted Mar 28, 1989·40 cites·16 claims
- 2080US5028987AHigh current hermetic package having a lead extending through the package lid and a packaged semiconductor chipGEN ELECTRIC·Filed 1989·Granted Jul 2, 1991·52 cites·25 claims
- 2180US4430792AMinimal mask process for manufacturing insulated-gate semiconductor devices with integral shortsGEN ELECTRIC·Filed 1982·Granted Feb 14, 1984·32 cites·12 claims
- 2280US4259683AHigh switching speed P-N junction devices with recombination means centrally located in high resistivity layerGEN ELECTRIC·Filed 1978·Granted Mar 31, 1981·36 cites·9 claims
- 2380US4079403AThyristor device with self-protection against breakover turn-on failureELECTRIC POWER RES INST·Filed 1976·Granted Mar 14, 1978·22 cites·7 claims
- 2479US5166773AHermetic package and packaged semiconductor chip having closely spaced leads extending through the package lidGEN ELECTRIC·Filed 1989·Granted Nov 24, 1992·50 cites·15 claims
- 2577US5424563AApparatus and method for increasing breakdown voltage ruggedness in semiconductor devicesHARRIS CORP·Filed 1993·Granted Jun 13, 1995·39 cites·35 claims
- 2675US5105536AMethod of packaging a semiconductor chip in a low inductance packageGEN ELECTRIC·Filed 1991·Granted Apr 21, 1992·51 cites·4 claims
- 2775US4374389AHigh breakdown voltage semiconductor deviceGEN ELECTRIC·Filed 1980·Granted Feb 15, 1983·26 cites·49 claims
- 2874US5139972ABatch assembly of high density hermetic packages for power semiconductor chipsGEN ELECTRIC·Filed 1991·Granted Aug 18, 1992·54 cites·8 claims
- 2974US5135890AMethod of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chipGEN ELECTRIC·Filed 1991·Granted Aug 4, 1992·49 cites·6 claims
- 3072US4809047AInsulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said shortGEN ELECTRIC·Filed 1987·Granted Feb 28, 1989·28 cites·26 claims
- 3171US5399892AMesh geometry for MOS-gated semiconductor devicesHARRIS CORP·Filed 1993·Granted Mar 21, 1995·27 cites·24 claims
- 3271US4905075AHermetic semiconductor enclosureGEN ELECTRIC·Filed 1988·Granted Feb 27, 1990·38 cites·24 claims
- 3371US4314266AThyristor with voltage breakover current control separated from main emitter by current limit regionELECTRIC POWER RES INST·Filed 1980·Granted Feb 2, 1982·23 cites·25 claims
- 3471US4012761ASelf-protected semiconductor deviceGEN ELECTRIC·Filed 1976·Granted Mar 15, 1977·16 cites·14 claims
- 3570US6110763AOne mask, power semiconductor device fabrication processINTERSIL CORP·Filed 1997·Granted Aug 29, 2000·38 cites·25 claims
- 3669US4980741AMOS protection deviceGEN ELECTRIC·Filed 1989·Granted Dec 25, 1990·26 cites·18 claims
- 3768US8970286B2Matrix-stages solid state ultrafast switchSILICON POWER CORP·Filed 2013·Granted Mar 3, 2015·2 cites·26 claims
- 3867US5463344AFast turn on switch circuit with parallel MOS controlled thyristor and silicon controlled rectifierHARRIS CORP·Filed 1993·Granted Oct 31, 1995·26 cites·28 claims
- 3966US6157076AHermetic thin pack semiconductor deviceINTERSIL CORP·Filed 1997·Granted Dec 5, 2000·36 cites·3 claims
- 4066US5654226AWafer bonding for power devicesHARRIS CORP·Filed 1994·Granted Aug 5, 1997·33 cites·16 claims
- 4166US5497013ASemi-conductor chip having interdigitated gate runners with gate bonding padsHARRIS CORP·Filed 1994·Granted Mar 5, 1996·20 cites·12 claims
- 4265US8575990B2Matrix-stages solid state ultrafast switchRESHETNYAK BORIS·Filed 2011·Granted Nov 5, 2013·2 cites·25 claims
- 4364US4261001APartially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivityGEN ELECTRIC·Filed 1980·Granted Apr 7, 1981·18 cites·5 claims
- 4459US5777346AMetal oxide semiconductor controlled thyristor with an on-field effect transistor in a trenchHARRIS CORP·Filed 1996·Granted Jul 7, 1998·18 cites·54 claims
- 4558US9159790B2Device and method for controlling the turn-off of a solid state switch (SGTO)RESHETNYAK BORIS·Filed 2014·Granted Oct 13, 2015·1 cites·12 claims
- 4658US5446316AHermetic package for a high power semiconductor deviceHARRIS CORP·Filed 1994·Granted Aug 29, 1995·23 cites·9 claims
- 4757US4958211AMCT providing turn-off control of arbitrarily large currentsGEN ELECTRIC·Filed 1988·Granted Sep 18, 1990·16 cites·39 claims
- 4856US4207583AMultiple gated light fired thyristor with non-critical light pipe couplingELECTRIC POWER RES INST·Filed 1978·Granted Jun 10, 1980·18 cites·16 claims
- 4955US5468668AMethod of forming MOS-gated semiconductor devices having mesh geometry patternHARRIS CORP·Filed 1995·Granted Nov 21, 1995·17 cites·10 claims
- 5055US4999684ASymmetrical blocking high voltage breakdown semiconducotr deviceGEN ELECTRIC·Filed 1989·Granted Mar 12, 1991·19 cites·13 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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