Inventor · disambiguated record
Vladimir Tassev
Also filed as: TASSEV VLADIMIR · TASSEV VLADIMIR L
23 granted patents·2 pending applications·114 citations·filing 2002–2022
94Inventor score
Top patents by PatentIndex Score
25 records- 0198US11603603B2Optimized heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2022·Granted Mar 14, 2023·5 cites·2 claims
- 0298US11384448B1Optimized Heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2020·Granted Jul 12, 2022·7 cites·2 claims
- 0391US9647156B1Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substratesUS AIR FORCE·Filed 2015·Granted May 9, 2017·16 cites·8 claims
- 0491US6849121B1Growth of uniform crystalsUS AIR FORCE·Filed 2002·Granted Feb 1, 2005·45 cites·10 claims
- 0585US6969426B1Forming improved metal nitridesBLISS DAVID F·Filed 2002·Granted Nov 29, 2005·27 cites·15 claims
- 0684US12157956B2Optimized heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2022·Granted Dec 3, 2024·0 cites·5 claims
- 0784US12116695B2Optimized heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2022·Granted Oct 15, 2024·0 cites·2 claims
- 0884US11795575B2Optimized heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2022·Granted Oct 24, 2023·0 cites·3 claims
- 0984US11795574B2Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatmentUS GOV AIR FORCE·Filed 2022·Granted Oct 24, 2023·0 cites·7 claims
- 1084US11788202B2Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatmentUS GOV AIR FORCE·Filed 2022·Granted Oct 17, 2023·0 cites·2 claims
- 1184US11761116B2Optimized heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2022·Granted Sep 19, 2023·0 cites·3 claims
- 1284US11761115B2Optimized heteroepitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2022·Granted Sep 19, 2023·0 cites·1 claims
- 1384US2023100277A1Optimized Heteroepitaxial Growth of SemiconductorsUS GOV AIR FORCE·Filed 2022·Application pending·0 cites
- 1483US11646201B1Method for fabrication of orientation-patterned templates on common substratesUS GOV AIR FORCE·Filed 2021·Granted May 9, 2023·1 cites·12 claims
- 1583US9960568B1Growth/fabrication of organic-inorganic quasi phase-matching structures for frequency conversion devicesUS AIR FORCE·Filed 2016·Granted May 1, 2018·1 cites·14 claims
- 1678US7276121B1Forming improved metal nitridesUS AIR FORCE·Filed 2004·Granted Oct 2, 2007·12 cites·5 claims
- 1777US12046471B1Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatmentUS GOV AIR FORCE·Filed 2020·Granted Jul 23, 2024·0 cites·2 claims
- 1877US11535951B1Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatmentUS GOV AIR FORCE·Filed 2020·Granted Dec 27, 2022·0 cites·3 claims
- 1977US11434583B1Optimized Heteropitaxial growth of semiconductorsUS GOV AIR FORCE·Filed 2020·Granted Sep 6, 2022·0 cites·6 claims
- 2077US11390963B1Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatmentUS GOV AIR FORCE·Filed 2020·Granted Jul 19, 2022·0 cites·1 claims
- 2161US10554015B1Growth/fabrication of organic-inorganic quasi phase-matching structures for frequency conversion devicesUS GOV AIR FORCE·Filed 2018·Granted Feb 4, 2020·0 cites·12 claims
- 2257US11087975B1Method for fabrication of orientation-patterned templates on common substratesUS GOV AIR FORCE·Filed 2019·Granted Aug 10, 2021·0 cites·4 claims
- 2346US9777402B2Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substratesUS AIR FORCE·Filed 2017·Granted Oct 3, 2017·0 cites·10 claims
- 2446US7524375B1Growth of uniform crystalsUS AIR FORCE·Filed 2004·Granted Apr 28, 2009·0 cites·5 claims
- 2545US2022267927A1QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENCAPSULATING LAYERUS GOV AIR FORCE·Filed 2021·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Vladimir Tassev files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →