Inventor · disambiguated record
Voon-Yew Thean
Also filed as: THEAN VOON YEW AARON · THEAN VOON-YEW
58 granted patents·10 pending applications·872 citations·filing 2003–2021
99Inventor score
Top patents by PatentIndex Score
68 records- 0197US7282402B2Method of making a dual strained channel semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 16, 2007·69 cites·19 claims
- 0297US7226833B2Semiconductor device structure and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 5, 2007·124 cites·18 claims
- 0396US10211312B2Ferroelectric memory device and fabrication method thereofIMEC VZW·Filed 2016·Granted Feb 19, 2019·15 cites·22 claims
- 0495US7018901B1Method for forming a semiconductor device having a strained channel and a heterojunction source/drainFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 28, 2006·105 cites·24 claims
- 0594US7585735B2Asymmetric spacers and asymmetric source/drain extension layersFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 8, 2009·33 cites·18 claims
- 0693US7575975B2Method for forming a planar and vertical semiconductor structure having a strained semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 18, 2009·34 cites·17 claims
- 0793US7226820B2Transistor fabrication using double etch/refill processFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 5, 2007·34 cites·20 claims
- 0892US9171904B2FinFET device with dual-strained channels and method for manufacturing thereofIMEC·Filed 2013·Granted Oct 27, 2015·13 cites·13 claims
- 0992US7867839B2Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistorsIBM·Filed 2008·Granted Jan 11, 2011·21 cites·14 claims
- 1092US7323389B2Method of forming a FINFET structureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jan 29, 2008·23 cites·20 claims
- 1192US7091071B2Semiconductor fabrication process including recessed source/drain regions in an SOI waferFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 15, 2006·22 cites·20 claims
- 1289US7803670B2Twisted dual-substrate orientation (DSO) substratesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 28, 2010·19 cites·19 claims
- 1388US7230264B2Semiconductor transistor having structural elements of differing materialsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 12, 2007·14 cites·10 claims
- 1487US9476143B2Methods using mask structures for substantially defect-free epitaxial growthIMEC·Filed 2013·Granted Oct 25, 2016·7 cites·16 claims
- 1587US7736957B2Method of making a semiconductor device with embedded stressorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 15, 2010·20 cites·19 claims
- 1687US7265004B2Electronic devices including a semiconductor layer and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 4, 2007·15 cites·14 claims
- 1787US7067868B2Double gate device having a heterojunction source/drain and strained channelFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·39 cites·17 claims
- 1886US9368498B2FinFET device with dual-strained channels and method for manufacturing thereofIMEC VZW·Filed 2015·Granted Jun 14, 2016·4 cites·12 claims
- 1986US7282415B2Method for making a semiconductor device with strain enhancementFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 16, 2007·17 cites·15 claims
- 2086US7029980B2Method of manufacturing SOI template layerFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·25 cites·17 claims
- 2183US7821067B2Electronic devices including a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 26, 2010·11 cites·20 claims
- 2282US7235502B2Transitional dielectric layer to improve reliability and performance of high dielectric constant transistorsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 26, 2007·8 cites·12 claims
- 2381US7763510B1Method for PFET enhancementFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jul 27, 2010·9 cites·18 claims
- 2481US7208357B2Template layer formationFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 24, 2007·18 cites·26 claims
- 2580US7037795B1Low RC product transistors in SOI semiconductor processFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted May 2, 2006·26 cites·17 claims
- 2679US7521720B2Semiconductor optical devices having fin structuresFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 21, 2009·4 cites·14 claims
- 2779US6979622B1Semiconductor transistor having structural elements of differing materials and method of formationFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 27, 2005·21 cites·16 claims
- 2877US7883953B2Method for transistor fabrication with optimized performanceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Feb 8, 2011·7 cites·18 claims
- 2977US7112455B2Semiconductor optical devices and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 26, 2006·10 cites·13 claims
- 3076US7960243B2Method of forming a semiconductor device featuring a gate stressor and semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 14, 2011·4 cites·20 claims
- 3175US7659156B2Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Feb 9, 2010·5 cites·19 claims
- 3275US7615806B2Method for forming a semiconductor structure and structure thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 10, 2009·6 cites·19 claims
- 3375US7556992B2Method for forming vertical structures in a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jul 7, 2009·6 cites·22 claims
- 3474US8039341B2Selective uniaxial stress modification for use with strained silicon on insulator integrated circuitFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 18, 2011·6 cites·8 claims
- 3573US8587039B2Method of forming a semiconductor device featuring a gate stressor and semiconductor deviceWINSTEAD BRIAN A·Filed 2011·Granted Nov 19, 2013·2 cites·19 claims
- 3673US7737018B2Process of forming an electronic device including forming a gate electrode layer and forming a patterned masking layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 15, 2010·4 cites·20 claims
- 3772US7781840B2Semiconductor device structureFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·4 cites·6 claims
- 3871US8003454B2CMOS process with optimized PMOS and NMOS transistor devicesFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Aug 23, 2011·3 cites·20 claims
- 3970US7205210B2Semiconductor structure having strained semiconductor and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 17, 2007·16 cites·15 claims
- 4067US7781277B2Selective uniaxial stress relaxation by layout optimization in strained silicon on insulator integrated circuitFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 24, 2010·3 cites·18 claims
- 4167US7285452B2Method to selectively form regions having differing properties and structureSADAKA MARIAM G·Filed 2006·Granted Oct 23, 2007·4 cites·13 claims
- 4266US11585775B2Method and system for integrity testing of sachetsNAT UNIV SINGAPORE·Filed 2019·Granted Feb 21, 2023·1 cites·20 claims
- 4366US7700420B2Integrated circuit with different channel materials for P and N channel transistors and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Apr 20, 2010·3 cites·9 claims
- 4466US7468313B2Engineering strain in thick strained-SOI substratesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 23, 2008·2 cites·20 claims
- 4564US8563394B2Integrated circuit structure having substantially planar N-P step height and methods of formingLI WEIPENG·Filed 2011·Granted Oct 22, 2013·2 cites·15 claims
- 4664US7056778B2Semiconductor layer formationFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 6, 2006·7 cites·42 claims
- 4763US7781839B2Structure and method for strained transistor directly on insulatorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 24, 2010·2 cites·12 claims
- 4863US7160769B2Channel orientation to enhance transistor performanceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 9, 2007·10 cites·24 claims
- 4962US7494832B2Semiconductor optical devices and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 24, 2009·1 cites·11 claims
- 5061US7811382B2Method for forming a semiconductor structure having a strained silicon layerFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 12, 2010·1 cites·15 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Voon-Yew Thean files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →