Inventor · disambiguated record
Vvss Satyasuresh Choppalli
Also filed as: CHOPPALLI VVSS SATYASURESH
9 granted patents·6 pending applications·13 citations·filing 2017–2024
79Inventor score
Top patents by PatentIndex Score
15 records- 0192US12327776B1Heat sink for face bonded semiconductor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jun 10, 2025·2 cites·17 claims
- 0290US10032761B1Electronic devices with tunable electrostatic discharge protection and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 24, 2018·9 cites·18 claims
- 0373US2025359098A1Heterojunction bipolar transistors with terminals having a non-planar arrangementGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 0468US10453836B2High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Oct 22, 2019·1 cites·10 claims
- 0567US10032765B1Integrated circuits with electrostatic discharge protection and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 24, 2018·1 cites·20 claims
- 0666US12237407B2Heterojunction bipolar transistor with amorphous semiconductor regionsGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 0758US11257808B2High holding high voltage (HHHV) FET for ESD protection with modified source and method for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
- 0858US2025210607A1Heterojunction bipolar transistor wafers with backside sub-collector contactGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 0957US12293994B2Semiconductor device integration with an amorphous regionGLOBALFOUNDRIES US INC·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 1057US2025359270A1Mos gate structure with dummy thermal viaGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1157US2025234653A1Silicon control rectifiersGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1256US2025210507A1Stacked trench capacitors and methods of making thereofGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 1355US12199147B2Semiconductor device including a body contact region and method of forming the sameGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1455US12170329B2High voltage MOSFET device with improved breakdown voltageGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 17, 2024·0 cites·20 claims
- 1552US2025221013A1Three dimensional serpentine resistorGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →