Inventor · disambiguated record
Wanbo Geng
Also filed as: Geng Wanbo
11 granted patents·2 pending applications·12 citations·filing 2020–2022
80Inventor score
Files withYANGTZE MEMORY TECH CO LTD13
Top patents by PatentIndex Score
13 records- 0195US11563021B2Memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 24, 2023·10 cites·20 claims
- 0287US11716847B2Three-dimensional NAND memory device with split gatesYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 1, 2023·2 cites·20 claims
- 0356US12471279B2Channel structures for three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 0453US12052865B2Three-dimensional memory devices with channel structures having plum blossom shape and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 30, 2024·0 cites·19 claims
- 0553US12052866B2Two-step L-shaped selective epitaxial growthYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 30, 2024·0 cites·12 claims
- 0653US11917823B2Channel structures having protruding portions in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 27, 2024·0 cites·20 claims
- 0752US12089405B2Three-dimensional memory devices with channel structures having plum blossom shapeYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 10, 2024·0 cites·20 claims
- 0851US11925019B2Channel structures having protruding portions in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·20 claims
- 0951US11751385B2Three-dimensional memory devices and fabricating methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 1048US12035524B2Channel structures having protruding portions in three-dimensional memory device and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jul 9, 2024·0 cites·18 claims
- 1148US11877449B2Methods for forming three-dimensional memory devices with channel structures having plum blossom shapeYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 16, 2024·0 cites·20 claims
- 1245US2022123013A1Three-dimensional semiconductor device and method of fabrication thereofYANGTZE MEMORY TECH CO LTD·Filed 2020·Application pending·0 cites
- 1343US2022123004A1Three-dimensional nand memory device with split channel gatesYANGTZE MEMORY TECH CO LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →