Inventor · disambiguated record
Walid M. Hafez
Also filed as: HAFEZ WALID · HAFEZ WALID M
169 granted patents·38 pending applications·470 citations·filing 2003–2025
99Inventor score
Top patents by PatentIndex Score
207 records- 0198US8432751B2Memory cell using BTI effects in high-k metal gate MOSHAFEZ WALID M·Filed 2010·Granted Apr 30, 2013·187 cites·20 claims
- 0297US11335601B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2020·Granted May 17, 2022·6 cites·24 claims
- 0397US10892192B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2020·Granted Jan 12, 2021·5 cites·20 claims
- 0496US11823954B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2022·Granted Nov 21, 2023·2 cites·24 claims
- 0596US11094782B1Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2020·Granted Aug 17, 2021·8 cites·25 claims
- 0694US9159734B2Antifuse element utilizing non-planar topologyHAFEZ WALID M·Filed 2011·Granted Oct 13, 2015·21 cites·23 claims
- 0794US8981481B2High voltage three-dimensional devices having dielectric linersHAFEZ WALID M·Filed 2012·Granted Mar 17, 2015·12 cites·15 claims
- 0893US9972642B2High voltage three-dimensional devices having dielectric linersINTEL CORP·Filed 2017·Granted May 15, 2018·5 cites·20 claims
- 0993US7943468B2Penetrating implant for forming a semiconductor deviceINTEL CORP·Filed 2008·Granted May 17, 2011·20 cites·9 claims
- 1092US10096599B2Methods of integrating multiple gate dielectric transistors on a tri-gate (finFET) processINTEL CORP·Filed 2015·Granted Oct 9, 2018·7 cites·6 claims
- 1192US9786783B2Transistor architecture having extended recessed spacer and source/drain regions and method of making sameINTEL CORP·Filed 2013·Granted Oct 10, 2017·16 cites·25 claims
- 1291US11387328B2III-N tunnel device architectures and high frequency mixers employing a III-N tunnel deviceINTEL CORP·Filed 2018·Granted Jul 12, 2022·6 cites·20 claims
- 1391US10692771B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2019·Granted Jun 23, 2020·4 cites·20 claims
- 1491US8796772B2Precision resistor for non-planar semiconductor device architectureYEH JENG-YA D·Filed 2012·Granted Aug 5, 2014·14 cites·24 claims
- 1591US2025031446A1High voltage three-dimensional devices having dielectric linersINTEL CORP·Filed 2024·Application pending·0 cites
- 1690US9899472B2Dielectric and isolation lower fin material for fin-based electronicsINTEL CORP·Filed 2017·Granted Feb 20, 2018·4 cites·23 claims
- 1790US9502883B2Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protectionINTEL CORP·Filed 2015·Granted Nov 22, 2016·7 cites·18 claims
- 1889US10204999B2Transistor with airgap spacerINTEL CORP·Filed 2015·Granted Feb 12, 2019·8 cites·8 claims
- 1989US2025098275A1Non-planar i/o and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2024·Application pending·0 cites
- 2088US12136628B2High voltage three-dimensional devices having dielectric linersINTEL CORP·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 2188US11437483B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2020·Granted Sep 6, 2022·2 cites·25 claims
- 2287US11424245B2Self-aligned gate endcap (SAGE) architecture having gate contactsINTEL CORP·Filed 2019·Granted Aug 23, 2022·3 cites·25 claims
- 2387US10115721B2Planar device on fin-based transistor architectureINTEL CORP·Filed 2016·Granted Oct 30, 2018·5 cites·20 claims
- 2487US9929090B2Antifuse element using spacer breakdownINTEL CORP·Filed 2014·Granted Mar 27, 2018·7 cites·25 claims
- 2587US9570467B2High voltage three-dimensional devices having dielectric linersHAFEZ WALID M·Filed 2015·Granted Feb 14, 2017·3 cites·5 claims
- 2686US8889508B2Precision resistor for non-planar semiconductor device architectureYEH JENG-YA D·Filed 2014·Granted Nov 18, 2014·8 cites·6 claims
- 2785US12191207B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 2885US11881486B2High voltage three-dimensional devices having dielectric linersINTEL CORP·Filed 2023·Granted Jan 23, 2024·0 cites·20 claims
- 2984US12199101B2Self-aligned gate endcap (SAGE) architecture having gate contactsINTEL CORP·Filed 2024·Granted Jan 14, 2025·0 cites·20 claims
- 3084US10707346B2High-voltage transistor with self-aligned isolationINTEL CORP·Filed 2015·Granted Jul 7, 2020·3 cites·3 claims
- 3184US10229853B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2013·Granted Mar 12, 2019·4 cites·14 claims
- 3284US8681573B2Programmable/re-programmable device in high-k metal gate MOSINTEL CORP·Filed 2013·Granted Mar 25, 2014·5 cites·24 claims
- 3384US2025022881A1Self-aligned gate endcap (sage) architecture having gate contactsINTEL CORP·Filed 2024·Application pending·0 cites
- 3483US9947585B2Multi-gate transistor with variably sized finINTEL CORP·Filed 2014·Granted Apr 17, 2018·5 cites·24 claims
- 3582US11430873B2Self aligned gate connected plates for group III-Nitride devices and methods of fabricationINTEL CORP·Filed 2018·Granted Aug 30, 2022·3 cites·20 claims
- 3682US10229866B2On-chip through-body-via capacitors and techniques for forming sameINTEL CORP·Filed 2015·Granted Mar 12, 2019·4 cites·20 claims
- 3781US11380679B2FET capacitor circuit architectures for tunable load and input matchingINTEL CORP·Filed 2018·Granted Jul 5, 2022·3 cites·17 claims
- 3881US11276760B2Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate sameINTEL CORP·Filed 2019·Granted Mar 15, 2022·2 cites·7 claims
- 3981US10756210B2Depletion mode gate in ultrathin FINFET based architectureINTEL CORP·Filed 2016·Granted Aug 25, 2020·3 cites·10 claims
- 4081US9356023B2Planar device on fin-based transistor architectureINTEL CORP·Filed 2013·Granted May 31, 2016·5 cites·25 claims
- 4181US9087719B2Extended drain non-planar MOSFETs for electrostatic discharge (ESD) protectionAHSAN AKM·Filed 2012·Granted Jul 21, 2015·7 cites·25 claims
- 4280US11610917B2High voltage three-dimensional devices having dielectric linersINTEL CORP·Filed 2022·Granted Mar 21, 2023·0 cites·25 claims
- 4380US11515407B2High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOSINTEL CORP·Filed 2018·Granted Nov 29, 2022·2 cites·23 claims
- 4480US9748252B2Antifuse element utilizing non-planar topologyINTEL CORP·Filed 2015·Granted Aug 29, 2017·3 cites·20 claims
- 4579US12349411B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 4679US11444171B2Self-aligned gate endcap (SAGE) architecture having gate or contact plugsINTEL CORP·Filed 2019·Granted Sep 13, 2022·2 cites·24 claims
- 4779US11387329B2Tri-gate architecture multi-nanowire confined transistorINTEL CORP·Filed 2018·Granted Jul 12, 2022·2 cites·20 claims
- 4878US11935892B2Self-aligned gate endcap (SAGE) architecture having gate contactsINTEL CORP·Filed 2022·Granted Mar 19, 2024·0 cites·25 claims
- 4978US11588037B2Planar transistors with wrap-around gates and wrap-around source and drain contactsINTEL CORP·Filed 2019·Granted Feb 21, 2023·2 cites·20 claims
- 5078US11538804B2Stacked integration of III-N transistors and thin-film transistorsINTEL CORP·Filed 2019·Granted Dec 27, 2022·2 cites·18 claims
Showing the top 50 of 207 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →