Inventor · disambiguated record
Wan-Chen Hsieh
Also filed as: HSIEH WAN CHEN
12 granted patents·13 pending applications·97 citations·filing 2001–2025
88Inventor score
Top patents by PatentIndex Score
25 records- 0197US11271083B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·6 cites·20 claims
- 0295US11728173B2Masking layer with post treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·3 cites·20 claims
- 0392US11605555B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
- 0490US2025343069A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0584US12324185B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0684US2024379407A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0783US12451390B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 0883US6692412B2Interactive exercise apparatus structureFiled 2001·Granted Feb 17, 2004·53 cites·3 claims
- 0983US2025267890A1Semiconductor device, finfet device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1081US11530479B2Atomic layer deposition tool and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 20, 2022·2 cites·20 claims
- 1178US6447429B1Body weight driven treadmillFiled 2001·Granted Sep 10, 2002·31 cites·4 claims
- 1278US2025338610A1Semiconductor Structure And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1376US2025366045A1Stacked multi-gate device with an insulating layer between top and bottom source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1476US2025336714A1Isolation regions for isolating transistors and the methods forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1575US11984485B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 1675US2024413157A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1773US12051700B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 1873US11532628B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 1967US2024120236A1Isolation Regions For Isolating Transistors and the Methods Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2066US2022356573A1Atomic layer deposition tool and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2164US2024413220A1Stacked multi-gate device with an insulating layer between top and bottom source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2263US2022415888A1Semiconductor Structure And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2357US2025015131A1Semiconductor devices with bonding layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2453US12166035B2FinFET with bowl-shaped gate isolation and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 2550US2023094267A1Method for natural killer cell expansionACADEMIA SINICA·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →