Inventor · disambiguated record
Wah Nam Hsu
Also filed as: HSU WAH NAM
17 granted patents·3 pending applications·96 citations·filing 2010–2019
92Inventor score
Top patents by PatentIndex Score
20 records- 0196US10210920B1Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applicationsQUALCOMM INC·Filed 2018·Granted Feb 19, 2019·25 cites·31 claims
- 0295US9245610B2OTP cell with reversed MTJ connectionKIM JUNG PILL·Filed 2012·Granted Jan 26, 2016·18 cites·10 claims
- 0393US8547736B2Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionRAO HARI M·Filed 2010·Granted Oct 1, 2013·19 cites·25 claims
- 0490US8923044B2MTP MTJ deviceLI XIA·Filed 2012·Granted Dec 30, 2014·13 cites·31 claims
- 0581US8797792B2Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionQUALCOMM INC·Filed 2013·Granted Aug 5, 2014·6 cites·20 claims
- 0678US9064589B2Three port MTJ structure and integrationLI XIA·Filed 2012·Granted Jun 23, 2015·3 cites·23 claims
- 0776US9679663B2OTP cell with reversed MTJ connectionQUALCOMM INC·Filed 2016·Granted Jun 13, 2017·3 cites·6 claims
- 0873US9966149B2OTP cell with reversed MTJ connectionQUALCOMM INC·Filed 2017·Granted May 8, 2018·2 cites·7 claims
- 0972US10431278B2Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperatureQUALCOMM INC·Filed 2017·Granted Oct 1, 2019·3 cites·25 claims
- 1071US10811068B2Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applicationsQUALCOMM INC·Filed 2019·Granted Oct 20, 2020·2 cites·15 claims
- 1153US8582354B1Method and apparatus for testing a resistive memory elementLI XIA·Filed 2012·Granted Nov 12, 2013·1 cites·45 claims
- 1252US9082962B2Magnetic Tunnel Junction (MTJ) on planarized electrodeQUALCOMM INC·Filed 2013·Granted Jul 14, 2015·0 cites·27 claims
- 1351US8681536B2Magnetic tunnel junction (MTJ) on planarized electrodeKANG SEUNG H·Filed 2010·Granted Mar 25, 2014·0 cites·12 claims
- 1448US8599606B2Memory bit repair schemeHSU WAH NAM·Filed 2012·Granted Dec 3, 2013·1 cites·20 claims
- 1543US2019066746A1VARYING ENERGY BARRIERS OF MAGNETIC TUNNEL JUNCTIONS (MTJs) IN DIFFERENT MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) ARRAYS IN A SEMICONDUCTOR DIE TO FACILITATE USE OF MRAM FOR DIFFERENT MEMORY APPLICATIONSQUALCOMM INC·Filed 2017·Application pending·0 cites
- 1641US9368232B2Magnetic automatic test equipment (ATE) memory tester device and method employing temperature controlQUALCOMM INC·Filed 2013·Granted Jun 14, 2016·0 cites·28 claims
- 1738US10534047B2Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivityQUALCOMM INC·Filed 2017·Granted Jan 14, 2020·0 cites·30 claims
- 1838US9159455B2Data retention error detection systemQUALCOMM INC·Filed 2013·Granted Oct 13, 2015·0 cites·30 claims
- 1935US2014139209A1Magnetic automatic testing equipment (ate) memory testerQUALCOMM INC·Filed 2012·Application pending·0 cites
- 2035US2018259581A1DYNAMICALLY CONTROLLING VOLTAGE PROVIDED TO THREE-DIMENSIONAL (3D) INTEGRATED CIRCUITS (ICs) (3DICs) TO ACCOUNT FOR PROCESS VARIATIONS MEASURED ACROSS INTERCONNECTED IC TIERS OF 3DICsQUALCOMM INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →