Inventor · disambiguated record
Wan-Yu Kai
Also filed as: KAI WAN-YU
12 granted patents·5 pending applications·13 citations·filing 2021–2025
88Inventor score
Top patents by PatentIndex Score
17 records- 0197US12268021B1Power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Apr 1, 2025·4 cites·20 claims
- 0296US12170311B1Manufacturing method for a power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Dec 17, 2024·3 cites·20 claims
- 0396US12154942B1Manufacturing method for a power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Nov 26, 2024·3 cites·20 claims
- 0495US12457775B2Power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Oct 28, 2025·1 cites·20 claims
- 0595US12369364B1Power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Jul 22, 2025·1 cites·20 claims
- 0695US12154941B1Power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Nov 26, 2024·1 cites·18 claims
- 0788US12446273B2Power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 0888US12256562B1Manufacturing method for a power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 0988US12224311B1Power MOSFET with gate-source ESD diode structureDIODES INC·Filed 2024·Granted Feb 11, 2025·0 cites·20 claims
- 1088US2025241024A1Power MOSFET with Gate-Source ESD Diode StructureDIODES INC·Filed 2024·Application pending·0 cites
- 1188US2025241023A1Manufacturing Method for a Power MOSFET with a p-n-p-n-p Gate-Source ESD Diode Structure Formed Over A Breakdown Voltage Enhancement and Leakage Prevention Structure Comprising a Reduced Surface Field (RESURF) Structure and a Body Ring StructureDIODES INC·Filed 2024·Application pending·0 cites
- 1279US12154954B2Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2023·Granted Nov 26, 2024·0 cites·10 claims
- 1379US2025048702A1Semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1473US2025275256A1Electrostatic Discharge Protection Structure, Semiconductor Power Device and Manufacturing Method ThereofDIODES INC·Filed 2025·Application pending·0 cites
- 1573US2025275255A1Electrostatic Discharge Protection Structure, Semiconductor Power Device and Manufacturing Method ThereofDIODES INC·Filed 2025·Application pending·0 cites
- 1672US11948982B2Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2021·Granted Apr 2, 2024·0 cites·8 claims
- 1767US12336298B1Electrostatic discharge protection structure, semiconductor power device and manufacturing method thereofDIODES INC·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Wan-Yu Kai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →