Inventor · disambiguated record
Wan-Yi Kao
Also filed as: KAO WAN-YI
62 granted patents·15 pending applications·89 citations·filing 2015–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD77
Top patents by PatentIndex Score
77 records- 0198US11282749B2Forming nitrogen-containing low-k gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
- 0297US11742201B2Method of filling gaps with carbon and nitrogen doped filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
- 0397US11437492B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 0497US11316034B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
- 0596US11916132B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0696US11710782B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·20 claims
- 0796US11469229B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·3 cites·20 claims
- 0895US11894464B2Fin field-effect transistor device with composite liner for the FinTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0995US11393711B2Silicon oxide layer for oxidation resistance and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 19, 2022·8 cites·20 claims
- 1095US11069812B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·9 cites·20 claims
- 1194US11322412B2Forming nitrogen-containing low-K gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 3, 2022·2 cites·20 claims
- 1293US10692773B2Forming nitrogen-containing low-K gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·5 cites·20 claims
- 1393US10510852B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1493US10312075B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 4, 2019·6 cites·20 claims
- 1592US10971589B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 1692US10529553B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 7, 2020·4 cites·20 claims
- 1790US10796898B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 6, 2020·2 cites·20 claims
- 1889US10516036B1Spacer structure with high plasma resistance for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·3 cites·20 claims
- 1989US10304677B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·5 cites·20 claims
- 2087US11244823B2Varying temperature anneal for film and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 8, 2022·3 cites·20 claims
- 2187US2025299947A1Methods of forming dielectric layers through deposition and anneal processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2286US11211243B2Method of filling gaps with carbon and nitrogen doped filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 2385US12501697B2Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 2484US12368044B2Methods of forming dielectric layers through deposition and anneal processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 2584US11355339B2Forming nitrogen-containing layers as oxidation blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 7, 2022·2 cites·20 claims
- 2683US12266728B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 2783US12255241B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 2883US2024387705A1Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2982US12288814B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 3082US12206013B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 3181US12176206B2Varying temperature anneal for film and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3280US12176349B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 3380US2024379350A1Forming nitrogen-containing layers as oxidation blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3480US2025048726A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3580US2024387238A1Silicon oxide layer for oxidation resistance and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3679US12506001B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 3779US11948841B2Forming nitrogen-containing low-K gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3879US11942549B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 3979US10867789B2Treatment to control deposition rateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 4079US10748760B2Varying temperature anneal for film and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 4179US2025169102A1Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4278US12148652B2Silicon oxide layer for oxidation resistance and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 4378US12015031B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 4478US10867860B2Methods of forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·2 cites·20 claims
- 4578US2025311267A1Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4677US12414320B2Fin field-effect transistor device with composite liner for the finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 4777US12261042B2Forming nitrogen-containing layers as oxidation blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 25, 2025·0 cites·20 claims
- 4876US2022277956A1Treatment to Control Deposition RateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4976US2025126822A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5075US11715637B2Varying temperature anneal for film and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·0 cites·20 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →