Inventor · disambiguated record
Wandon Kim
Also filed as: KIM WANDON
48 granted patents·16 pending applications·62 citations·filing 2002–2024
97Inventor score
Top patents by PatentIndex Score
64 records- 0194US11417656B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 16, 2022·3 cites·20 claims
- 0293US11631769B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 18, 2023·3 cites·17 claims
- 0392US11804530B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 31, 2023·2 cites·20 claims
- 0492US11145738B2Semiconductor devices having multiple barrier patternsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 12, 2021·3 cites·20 claims
- 0591US11387236B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
- 0691US10784260B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·7 cites·20 claims
- 0790US11955487B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·19 claims
- 0889US11888063B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 30, 2024·1 cites·20 claims
- 0988US8343844B2Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured therebySAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·11 cites·12 claims
- 1087US11239334B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·2 cites·19 claims
- 1185US9627509B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 18, 2017·6 cites·16 claims
- 1282US11664310B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·1 cites·20 claims
- 1382US11411106B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 9, 2022·1 cites·20 claims
- 1482US9991357B2Semiconductor devices with gate electrodes on separate sets of high-k dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 5, 2018·4 cites·19 claims
- 1581US12451421B2Semiconductor device with double etch stop layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 21, 2025·1 cites·17 claims
- 1681US12183742B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Dec 31, 2024·0 cites·20 claims
- 1780US11296078B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 5, 2022·2 cites·19 claims
- 1880US9093460B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 28, 2015·7 cites·17 claims
- 1978US11094586B2Semiconductor device including interconnections having different structures and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·3 cites·20 claims
- 2077US2024250144A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2175US11948994B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·5 claims
- 2274US10985275B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 20, 2021·1 cites·19 claims
- 2371US12199163B2Semiconductor device and method of fabricating the same where semiconductor device includes high-k dielectric layer that does not extend between inhibition layer and side of gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 2471US2024234312A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2570US11837645B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 2670US11778835B2Semiconductor switching devices having ferroelectric layers therein and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 2769US11538916B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 2868US12218046B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2968US11682706B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 3067US12080712B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 3167US11929366B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·19 claims
- 3265US11955523B2Semiconductor device including a gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 3365US11610975B2Semiconductor devices having multiple barrier patternsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
- 3464US12444675B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 3564US11830874B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 3664US11217677B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 4, 2022·0 cites·20 claims
- 3763US12062661B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·10 claims
- 3862US12419086B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 3962US12021027B2Integrated circuit device having parallel conductive lines with bulging end portion(s) and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 25, 2024·0 cites·19 claims
- 4062US11335701B2Semiconductor switching devices having ferroelectric layers therein and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 17, 2022·0 cites·11 claims
- 4162US11233050B2Semiconductor device with diffusion barrier in the active contactSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 4261US11557656B2Semiconductor device having a capping pattern on a gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·19 claims
- 4359US2025192029A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4458US11594604B2Semiconductor device including a gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 4558US11374001B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·16 claims
- 4658US2025107179A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4758US2025096134A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4855US2024128335A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4954US12354943B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·0 cites·19 claims
- 5054US12243815B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →