Inventor · disambiguated record
Wayne Kinney
Also filed as: KINNEY WAYNE · KINNEY WAYNE I · WARD EDMOND R
114 granted patents·9 pending applications·3,955 citations·filing 1984–2024
99Inventor score
Files withMICRON TECHNOLOGY INC51UNITY SEMICONDUCTOR CORP44HEFEI RELIANCE MEMORY LTD7RINERSON DARRELL4SCHLOSS LAWRENCE4
Top patents by PatentIndex Score
123 records- 0199US6753561B1Cross point memory array using multiple thin filmsUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Jun 22, 2004·425 cites·34 claims
- 0298US9613676B1Writing to cross-point non-volatile memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 4, 2017·68 cites·35 claims
- 0398US9472560B2Memory cell and an array of memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 18, 2016·92 cites·29 claims
- 0498US8848425B2Conductive metal oxide structures in non volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2013·Granted Sep 30, 2014·59 cites·20 claims
- 0598US8045364B2Non-volatile memory device ion barrierUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 25, 2011·121 cites·32 claims
- 0698US7538338B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 26, 2009·144 cites·30 claims
- 0798US6965137B2Multi-layer conductive memory deviceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Nov 15, 2005·168 cites·45 claims
- 0898US6834008B2Cross point memory array using multiple modes of operationUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Dec 21, 2004·161 cites·17 claims
- 0998US5046043AFerroelectric capacitor and memory cell including barrier and isolation layersNAT SEMICONDUCTOR CORP·Filed 1987·Granted Sep 3, 1991·213 cites·14 claims
- 1097US7884349B2Selection device for re-writable memoryUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Feb 8, 2011·76 cites·39 claims
- 1197US7400006B1Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 15, 2008·58 cites·24 claims
- 1297US7067862B2Conductive memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·142 cites·43 claims
- 1397US6870755B2Re-writable memory with non-linear memory elementUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Mar 22, 2005·137 cites·18 claims
- 1497US5654222AMethod for forming a capacitor with electrically interconnected constructionMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 5, 1997·195 cites·23 claims
- 1596US9570515B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2015·Granted Feb 14, 2017·12 cites·19 claims
- 1696US7985963B2Memory using variable tunnel barrier widthsUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Jul 26, 2011·36 cites·33 claims
- 1796US6970375B2Providing a reference voltage to a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Nov 29, 2005·108 cites·16 claims
- 1896US5955758AMethod of forming a capacitor plate and a capacitor incorporating sameMICRON TECHNOLOGY INC·Filed 1996·Granted Sep 21, 1999·123 cites·41 claims
- 1996US5541872AFolded bit line ferroelectric memory deviceMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 30, 1996·151 cites·6 claims
- 2095US10636471B2Memory arrays, ferroelectric transistors, and methods of reading and writing relative to memory cells of memory arraysMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 28, 2020·15 cites·18 claims
- 2195US9806130B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2016·Granted Oct 31, 2017·10 cites·27 claims
- 2295US9159408B2Memory element with a reactive metal layerUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·12 cites·15 claims
- 2395US8675389B2Memory element with a reactive metal layerCHEVALLIER CHRISTOPHE·Filed 2011·Granted Mar 18, 2014·13 cites·28 claims
- 2495US7889539B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Feb 15, 2011·19 cites·20 claims
- 2595US7633790B2Multi-resistive state memory device with conductive oxide electrodesUNITY SEMICONDUCTOR CORP·Filed 2008·Granted Dec 15, 2009·23 cites·8 claims
- 2694US7394679B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2006·Granted Jul 1, 2008·20 cites·17 claims
- 2794US7071008B2Multi-resistive state material that uses dopantsUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 4, 2006·69 cites·22 claims
- 2894US7038935B22-terminal trapped charge memory device with voltage switchable multi-level resistanceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted May 2, 2006·85 cites·46 claims
- 2994US5357463AMethod for reverse programming of a flash EEPROMMICRON SEMICONDUCTOR INC·Filed 1992·Granted Oct 18, 1994·130 cites·8 claims
- 3093US9007818B2Memory cells, semiconductor device structures, systems including such cells, and methods of fabricationSANDHU GURTEJ S·Filed 2012·Granted Apr 14, 2015·14 cites·21 claims
- 3193US8062942B2Method for fabricating multi-resistive state memory devicesRINERSON DARRELL·Filed 2008·Granted Nov 22, 2011·17 cites·19 claims
- 3293US7995371B2Threshold device for a memory arrayUNITY SEMICONDUCTOR CORP·Filed 2007·Granted Aug 9, 2011·30 cites·39 claims
- 3393US6850429B2Cross point memory array with memory plugs exhibiting a characteristic hysteresisUNITY SEMICONDUCTOR CORP·Filed 2002·Granted Feb 1, 2005·73 cites·16 claims
- 3493US5424975AReference circuit for a non-volatile ferroelectric memoryMICRON TECHNOLOGY INC·Filed 1993·Granted Jun 13, 1995·86 cites·7 claims
- 3592US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 3692US7082052B2Multi-resistive state element with reactive metalUNITY SEMICONDUCTOR CORP·Filed 2004·Granted Jul 25, 2006·35 cites·15 claims
- 3792US7079442B2Layout of driver sets in a cross point memory arrayUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jul 18, 2006·71 cites·37 claims
- 3892US6906939B2Re-writable memory with multiple memory layersUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Jun 14, 2005·56 cites·26 claims
- 3991US11398263B2Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 26, 2022·2 cites·20 claims
- 4091US5536672AFabrication of ferroelectric capacitor and memory cellNAT SEMICONDUCTOR CORP·Filed 1992·Granted Jul 16, 1996·73 cites·25 claims
- 4190US9159913B2Two-terminal reversibly switchable memory deviceUNITY SEMICONDUCTOR CORP·Filed 2014·Granted Oct 13, 2015·6 cites·20 claims
- 4289US10726899B2Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 28, 2020·3 cites·22 claims
- 4389US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 4489US8796751B2Transistors, memory cells and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2012·Granted Aug 5, 2014·8 cites·22 claims
- 4589US7326979B2Resistive memory device with a treated interfaceUNITY SEMICONDUCTOR CORP·Filed 2003·Granted Feb 5, 2008·51 cites·8 claims
- 4688US8031510B2Ion barrier capUNITY SEMICONDUCTOR CORP·Filed 2010·Granted Oct 4, 2011·9 cites·17 claims
- 4788US5985714AMethod of forming a capacitorMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 16, 1999·56 cites·31 claims
- 4887US10319426B2Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 11, 2019·5 cites·22 claims
- 4987US8031509B2Conductive metal oxide structures in non-volatile re-writable memory devicesUNITY SEMICONDUCTOR CORP·Filed 2009·Granted Oct 4, 2011·13 cites·50 claims
- 5087US7042035B2Memory array with high temperature wiringUNITY SEMICONDUCTOR CORP·Filed 2004·Granted May 9, 2006·45 cites·47 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →