Inventor · disambiguated record
Wan-Hsien Lin
Also filed as: LIN WAN-HSIEN
3 granted patents·2 pending applications·5 citations·filing 2020–2025
57Inventor score
Technology areasH10W
Files withTAIWAN SEMICONDUCTOR MFG CO LTD5
Top patents by PatentIndex Score
5 records- 0195US11532479B2Cut metal gate refill with voidTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·5 cites·20 claims
- 0278US2025125150A1Cut metal gate refill with voidTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0374US2025316598A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0471US12283485B2Cut metal gate refill with voidTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 22, 2025·0 cites·18 claims
- 0570US12388021B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →