Inventor · disambiguated record
Wan-Jun Park
Also filed as: PARK WAN-JUN
41 granted patents·13 pending applications·354 citations·filing 2002–2013
98Inventor score
Top patents by PatentIndex Score
54 records- 0193US6781871B2Magnetic random access memory and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 24, 2004·71 cites·15 claims
- 0290US7936030B2Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetweenSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 3, 2011·9 cites·11 claims
- 0385US7639524B2Multi-bit nonvolatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 29, 2009·12 cites·32 claims
- 0485US7625812B2Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wiresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 1, 2009·13 cites·12 claims
- 0584US7381983B2N-type carbon nanotube field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 3, 2008·8 cites·4 claims
- 0683US7767140B2Method for manufacturing zinc oxide nanowires and device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 3, 2010·5 cites·3 claims
- 0782US9006848B2Nonvolatile magnetic memory deviceSK HYNIX INC·Filed 2013·Granted Apr 14, 2015·7 cites·18 claims
- 0882US8320166B2Magnetic random access memory and method of reading data from the samePARK WAN-JUN·Filed 2008·Granted Nov 27, 2012·13 cites·12 claims
- 0982US7115306B2Method of horizontally growing carbon nanotubes and device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 3, 2006·12 cites·15 claims
- 1081US7767502B2Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 3, 2010·8 cites·17 claims
- 1180US7453085B2Nano-elastic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 18, 2008·17 cites·17 claims
- 1280US6815784B2Magneto-resistive random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·29 cites·13 claims
- 1379US7705347B2N-type carbon nanotube field effect transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 27, 2010·5 cites·13 claims
- 1475US7132714B2Vertical carbon nanotube-field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 7, 2006·19 cites·13 claims
- 1574US6924520B2MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 2, 2005·17 cites·9 claims
- 1673US7272033B2Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·4 cites·14 claims
- 1772US8101983B2Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the sameSEO SUN-AE·Filed 2007·Granted Jan 24, 2012·7 cites·8 claims
- 1872US7897412B2Method of manufacturing magnetic random access memory including middle oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 1, 2011·3 cites·13 claims
- 1972US7195929B2MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·7 cites·21 claims
- 2070US7170777B2Phase change memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 30, 2007·7 cites·16 claims
- 2169US7387735B2Method of isolating semiconducting carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 17, 2008·10 cites·15 claims
- 2268US7604790B2Method of removing carbonaceous impurities in carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 20, 2009·1 cites·11 claims
- 2366US7811833B2Method of manufacturing a multi-purpose magnetic film structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·2 cites·20 claims
- 2466US7799307B2Method of growing single-walled carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 21, 2010·3 cites·8 claims
- 2565US7220599B2Method for manufacturing magneto-resistive random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 22, 2007·10 cites·20 claims
- 2664US7061034B2Magnetic random access memory including middle oxide layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·8 cites·7 claims
- 2763US7176488B2Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 13, 2007·9 cites·6 claims
- 2859US7816175B2Nano-elastic memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 19, 2010·5 cites·25 claims
- 2958US7165197B2Apparatus and method of analyzing a magnetic random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 16, 2007·9 cites·21 claims
- 3058US2005158777A1Method of isolating nucleic acid by using carbon nanotubeFiled 2004·Application pending·0 cites
- 3157US6894920B2Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAMSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 17, 2005·9 cites·26 claims
- 3255US8294348B2Field emission electrode, method of manufacturing the same, and field emission device comprising the sameMIN YO-SEP·Filed 2007·Granted Oct 23, 2012·0 cites·16 claims
- 3355US8164130B2Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the sameSEO SUN-AE·Filed 2004·Granted Apr 24, 2012·7 cites·9 claims
- 3453US2006281385A1Method of fabricating carbon nanotubes using focused ion beamSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3551US7015555B2Magnetoresistive random access memory with high selectivitySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·3 cites·17 claims
- 3650US8272914B2Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external wallsMIN YO-SEP·Filed 2011·Granted Sep 25, 2012·0 cites·8 claims
- 3749US7560394B2Nanodots formed on silicon oxide and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 14, 2009·1 cites·25 claims
- 3848US2007236133A1Field emission electrode, field emission device having the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3946US2007187729A1Unipolar nanotube and field effect transistor having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4044US8237214B2Non-volatile memory device including metal-insulator transition materialPARK WAN-JUN·Filed 2007·Granted Aug 7, 2012·0 cites·8 claims
- 4143US7713509B2Method of forming nitrogen-doped single-walled carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 11, 2010·1 cites·10 claims
- 4243US2010272900A1Method of fabricating zinc oxide nanowire using supersonic energyPARK WAN-JUN·Filed 2008·Application pending·0 cites
- 4342US7918989B2Gas sensor and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 5, 2011·1 cites·9 claims
- 4442US2006216636A1Catalytic resist including metal precursor compound and method of patterning catalyst particles using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4542US2007154623A1Method for manufacturing single-walled carbon nanotube on glassMIN YO-SEP·Filed 2006·Application pending·0 cites
- 4642US2003116426A1Method of depositing heusler alloy thin film by co-sputteringFiled 2002·Application pending·0 cites
- 4741US7002841B2MRAM and methods for manufacturing and driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·2 cites·30 claims
- 4841US2008118993A1Method of manufacturing magnetic random access memory (MRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4939US8221716B2Method of synthesizing carbon nanotubesJEONG SOO-HWAN·Filed 2005·Granted Jul 17, 2012·0 cites·10 claims
- 5037US2007246784A1Unipolar nanotube transistor using a carrier-trapping materialSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →