Inventor · disambiguated record
Wenbi Cai
Also filed as: CAI WENBI
12 granted patents·11 pending applications·2 citations·filing 2015–2024
80Inventor score
Files withXIAMEN SANAN INTEGRATED CIRCUIT CO LTD11BEIJING HYDROPHIS NETWORK TECH CO LTD6XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD3HUNAN SANAN SEMICONDUCTOR CO LTD1HUNAN SAN’AN SEMICONDUCTOR CO LTD1
Top patents by PatentIndex Score
23 records- 0190US11955518B2Epitaxial structure and transistor including the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Apr 9, 2024·2 cites·20 claims
- 0279US12199145B2Epitaxial structure and transistor including the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Jan 14, 2025·0 cites·20 claims
- 0355US2023387232A1Radio frequency device and radio frequency front-end apparatusXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 0454US2024320628A1Method, apparatus, device, and computer-readable storage medium for visualizing personal resumeBEIJING HYDROPHIS NETWORK TECH CO LTD·Filed 2024·Application pending·0 cites
- 0554US2024311931A1Method, apparatus, device, and storage medium for clustering extraction of entity relationshipsBEIJING HYDROPHIS NETWORK TECH CO LTD·Filed 2024·Application pending·0 cites
- 0653US2025120105A1Power deviceXIAMEN SAN’AN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 0753US2023299128A1Lateral field-effect transistor and preparing methodHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 0852US12191376B2Power device and method for making the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·27 claims
- 0951US12317564B2Gallium nitride-based compound semiconductor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted May 27, 2025·0 cites·8 claims
- 1051US11862680B2Electrostatic discharge protection structure, nitride-based device having the same and method for manufacturing nitride-based deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 1149US2022181846A1Optical modulator and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Application pending·0 cites
- 1248US12481692B2Method, electronic apparatus, and computer-readable storage medium for identifying entity relationship pairsBEIJING HYDROPHIS NETWORK TECH CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·14 claims
- 1347US12453183B2Semiconductor device with low potential terminals connected to wellsXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·12 claims
- 1447US2024311568A1Entity relation mining method and apparatus, electronic device, and storage mediumBEIJING HYDROPHIS NETWORK TECH CO LTD·Filed 2024·Application pending·0 cites
- 1547US2024320435A1Method and apparatus for entity relationship recognition, electronic device, and storage mediumBEIJING HYDROPHIS NETWORK TECH CO LTD·Filed 2024·Application pending·0 cites
- 1646US9548428B2Light-emitting diode and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Jan 17, 2017·0 cites·19 claims
- 1746US2024120394A1Semiconductor device and method for manufacturing the sameHUNAN SAN’AN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 1845US9184356B2Light-emitting diode and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Nov 10, 2015·0 cites·14 claims
- 1945US2024313088A1Integrated semiconductor structure and method for making the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2044US11823086B2Membership analyzing method, apparatus, computer device and storage mediumBEIJING HYDROPHIS NETWORK TECH CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·9 claims
- 2143US11869969B2Semiconductor device and method for manufacturing the sameXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·11 claims
- 2237US9257614B2Warm white LED with stacked wafers and fabrication method thereofXIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO LTD·Filed 2015·Granted Feb 9, 2016·0 cites·12 claims
- 2335US2020365705A1Method of forming ohmic contact for gallium nitride-based compound semiconductor device and gallium nitride-based compound semiconductor deviceXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →