Inventor · disambiguated record
Wen-Hsin Chan
Also filed as: CHAN WEN-HSIN
14 granted patents·1 pending application·28 citations·filing 2013–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD15
Top patents by PatentIndex Score
15 records- 0189US12283595B2Integration of multiple transistors having fin and mesa structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 22, 2025·1 cites·20 claims
- 0289US10867852B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 15, 2020·7 cites·20 claims
- 0389US10147805B2Structure and formation method of semiconductor device structure with a dummy fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 4, 2018·6 cites·20 claims
- 0486US11018234B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 25, 2021·3 cites·20 claims
- 0583US10008568B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·5 cites·20 claims
- 0682US12507461B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0780US10505023B2Structure and formation method of semiconductor device structure with a dummy fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 0871US11848367B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 0971US9136340B2Doped protection layer for contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 15, 2015·2 cites·19 claims
- 1071US2025221033A1Integration of multiple transistors having fin and mesa structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1170US11081571B2Structure and formation method of semiconductor device structure with a dummy fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 3, 2021·0 cites·20 claims
- 1267US9589915B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·2 cites·20 claims
- 1363US10727321B2Structure and formation method of semiconductor device structure with a dummy fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·0 cites·20 claims
- 1453US9991123B2Doped protection layer for contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·0 cites·20 claims
- 1551US9647087B2Doped protection layer for contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →