Inventor · disambiguated record

Weng Chang

Also filed as: CHANG WENG · CHANG WENG-PING

102 granted patents·43 pending applications·1,148 citations·filing 1994–2025

99Inventor score

Technology areasH10P H10D H10W C23C H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD103 TAIWAN SEMICONDUCTOR MFG34 TAIWAN SEMICONDUCTOR MANFACTUR2 CHANG WENG1 CHANG WENG-PING1

Top patents by PatentIndex Score

145 records

0198US11502081B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
0298US11227931B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·4 cites·20 claims
0397US11502080B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·3 cites·20 claims
0497US10304835B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·33 cites·20 claims
0596US11935937B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
0696US5514350AApparatus for making nanostructured ceramic powders and whiskersUNIV RUTGERS·Filed 1994·Granted May 7, 1996·142 cites·7 claims
0795US12166095B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·1 cites·20 claims
0895US11430698B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
0995US11380774B2Etching back and selective deposition of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 5, 2022·9 cites·20 claims
1095US10879370B2Etching back and selective deposition of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 29, 2020·9 cites·20 claims
1194US12009391B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·2 cites·20 claims
1294US11810961B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·2 cites·20 claims
1394US11444198B2Work function control in gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
1494US10297453B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 21, 2019·11 cites·20 claims
1594US9947540B2Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·14 cites·20 claims
1694US6319809B1Method to reduce via poison in low-k Cu dual damascene by UV-treatmentTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2000·Granted Nov 20, 2001·97 cites·23 claims
1793US9978601B2Methods for pre-deposition treatment of a work-function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·8 cites·20 claims
1892US12132112B2Work function control in gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·1 cites·20 claims
1992US11842928B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
2092US2025359318A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2191US11075124B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 27, 2021·2 cites·20 claims
2290US11699621B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
2390US8846461B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 30, 2014·8 cites·17 claims
2490US8344447B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 1, 2013·13 cites·11 claims
2590US6753249B1Multilayer interface in copper CMP for low K dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·64 cites·57 claims
2689US11121041B2Methods for threshold voltage tuning and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·4 cites·20 claims
2789US10510621B2Methods for threshold voltage tuning and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
2889US10510756B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·3 cites·20 claims
2988US10504795B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·3 cites·20 claims
3088US9590065B2Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 7, 2017·6 cites·20 claims
3187US9761683B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·5 cites·21 claims
3287US7114450B1Magazine for receiving electric shock bulletsCHANG WENG-PING·Filed 2005·Granted Oct 3, 2006·32 cites·8 claims
3387US6159842AMethod for fabricating a hybrid low-dielectric-constant intermetal dielectric (IMD) layer with improved reliability for multilevel interconnectionsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·97 cites·26 claims
3486US12464817B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
3586US9064857B2N metal for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 23, 2015·6 cites·20 claims
3686US6383935B1Method of reducing dishing and erosion using a sacrificial layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 7, 2002·45 cites·16 claims
3786US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3885US7119404B2High performance strained channel MOSFETs by coupled stress effectsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 10, 2006·35 cites·27 claims
3985US7115974B2Silicon oxycarbide and silicon carbonitride based materials for MOS devicesTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2004·Granted Oct 3, 2006·34 cites·19 claims
4084US12183638B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
4184US12176251B2Semiconductor device with profiled work-function metal gate electrode and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
4284US6274483B1Method to improve metal line adhesion by trench corner shape modificationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 14, 2001·40 cites·13 claims
4384US6268294B1Method of protecting a low-K dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 31, 2001·32 cites·16 claims
4484US2025366118A1Semiconductor gate and contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4583US12142659B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
4683US11855163B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·19 claims
4783US6372632B1Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 16, 2002·37 cites·33 claims
4883US2025366101A1Semiconductor structure including nanosheet channel structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4982US12376340B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
5082US11855098B2Semiconductor devices having dipole-inducing elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims

Showing the top 50 of 145 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →