Inventor · disambiguated record
Wen-Ling Chang
Also filed as: CHANG WEN-LING
0 granted patents·11 pending applications·0 citations·filing 2023–2025
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0179US2025357202A1Semiconductor package redistribution structure and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0278US2025357372A1IC Structure with Stress-Release Pattern to Enhance Package YieldTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0371US2025118683A1IC Structure with Stress-Release Pattern to Enhance Package YieldTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0469US2024282628A1Semiconductor package redistribution structure and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0560US2025140687A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0658US2025218940A1Semiconductor structure and method of fabricating a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0757US2024429156A1Embedding Metal-Insulator-Metal Structure In Silicon Oxide In A Copper Redistribution Layer SchemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0857US2024421065A1Metal-insulator-metal structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0953US2024379595A1Semiconductor structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1053US2024136291A1Low-stress passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1151US2024088208A1Semiconductor device structure with metal oxide layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →