Inventor · disambiguated record

Wei Te Chiang

Also filed as: CHIANG WEI-TE

6 granted patents·1 pending application·14 citations·filing 2017–2025

76Inventor score

Technology areasH10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD7

Top patents by PatentIndex Score

7 records

0195US10453943B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·11 cites·20 claims
0289US2025324639A1Fets and methods of forming fetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0385US11205713B2FinFET having a non-faceted top surface portion for a source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 21, 2021·2 cites·20 claims
0483US12402344B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
0579US11600715B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 7, 2023·1 cites·20 claims
0659US10861935B2Semiconductor device source/drain region with arsenic-containing barrier regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
0756US10374038B2Semiconductor device source/drain region with arsenic-containing barrier regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 6, 2019·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →