Inventor · disambiguated record
Wen-Chih Chiang
Also filed as: CHIANG WEN-CHIH
39 granted patents·11 pending applications·35 citations·filing 2017–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD50
Top patents by PatentIndex Score
50 records- 0196US11888074B2Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0295US11508628B2Method for forming a crystalline protective polysilicon layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·3 cites·8 claims
- 0395US11257963B1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·4 cites·20 claims
- 0493US11769837B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·2 cites·20 claims
- 0593US2025366072A1Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0691US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 0790US11682736B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
- 0889US11563127B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·2 cites·20 claims
- 0989US2025126848A1Flash Memory Device with Three Dimensional Half Flash Structure and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1088US11031320B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·3 cites·20 claims
- 1187US12402362B2Flash memory device with three-dimensional half structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 1287US11688666B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 1387US11658248B2Flash memory device with three-dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·1 cites·20 claims
- 1487US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 1584US12218253B2Flash memory device with three dimensional half flash structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1684US11594645B1Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·14 claims
- 1784US2025098227A1Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1882US12068227B2Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 1982US2024363495A1Structures and methods for reducing process charging damagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2081US11183572B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
- 2180US12199159B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 2277US12249657B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 2377US11935795B2Method for forming a crystalline protective polysilicon layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 2477US2024371881A1Structures and methods for trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2577US2024222197A1Method for forming a crystalline protective polysilicon layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2676US12113135B2Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 2776US2024387749A1Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2875US12261228B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 2975US12074169B2Structures and methods for trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 3075US11942543B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 3173US12308271B2Semiconductor wafer processing system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 3273US11728399B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3371US12272756B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3471US10879236B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 3571US2025241014A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3668US11424359B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·20 claims
- 3764US11903193B2Two dimensional structure to control flash operation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 3863US11901207B2Semiconductor wafer processing system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 3960US12051755B2Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 4060US11894381B2Structures and methods for trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 6, 2024·0 cites·20 claims
- 4159US10892360B2Semiconductor device structure with high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 12, 2021·0 cites·20 claims
- 4259US2025344438A1Semiconductor devices having contact field plates and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4357US11792981B2Two dimensional structure to control flash operation and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·0 cites·20 claims
- 4455US10964781B2High voltage resistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 30, 2021·0 cites·20 claims
- 4554US10679987B2Bootstrap metal-oxide-semiconductor (MOS) device integrated with a high voltage MOS (HVMOS) device and a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·20 claims
- 4652US11862675B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 4752US10297661B2High voltage resistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·0 cites·20 claims
- 4852US2024079263A1Wafer transport method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4952US2024347359A1Wafer carrier having inspection window and operating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5050US10586705B2Fluorine doped non-volatile memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 10, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →