Inventor · disambiguated record
Wei-Gang Chiu
Also filed as: CHIU WEI-GANG
9 granted patents·14 pending applications·4 citations·filing 2020–2025
78Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD23
Top patents by PatentIndex Score
23 records- 0197US11404586B1Transistors with enhanced dopant profile and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0285US2025351444A1Transistor including a hydrogen-diffusion barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0382US12432971B2Transistor including a hydrogen-diffusion barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 0480US12298362B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 0577US2025331196A1Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0676US2025231260A1Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0774US11837667B2Transistors with enhanced dopant profile and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 0873US2024373759A1Tungsten via for a magnetic tunnel junction interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0972US11935935B2Transistor including a hydrogen-diffusion barrier and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·20 claims
- 1069US12382640B2Memory device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 1167US12414326B2Thin film transistor featuring variable thickness glue layer with tapered endTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 1266US12075709B2Tungsten via for a magnetic tunnel junction interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 1363US11698423B2Magnetic tunnel junction device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 11, 2023·0 cites·20 claims
- 1460US2025063720A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1560US2025248072A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1659US2025351411A1Transistor produced using improved metal oxide processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1759US2025386566A1Oxygen scavenging source/drain for integrated deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1858US2025351434A1Semiconductor device including source/drain unit with tunnel layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1958US2025240973A1Ferroelectric non-volatile memory and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2056US2024081081A1Ferroelectric memory device and semiconductor dieTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2155US2025014945A1Semiconductor device including a metal oxide interface layer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2254US2025133820A1Insertion layer between channel and passivation for transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2354US2025031388A1Capacitor having a bottom capacitor plate with a rough upper surface, semiconductor device including the capacitor and and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →