Inventor · disambiguated record

Wen-Ting Chu

Also filed as: CHU WEN-TING

245 granted patents·33 pending applications·2,090 citations·filing 1997–2025

99Inventor score

Technology areasH10D H01L H10W H10N G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD188 TAIWAN SEMICONDUCTOR MFG81 MOSEL VITELIC INC2 WANG YU-HSIUNG2 CHIH YUE-DER1

Top patents by PatentIndex Score

278 records

0199US11024381B2Resistive random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 1, 2021·8 cites·20 claims
0299US10164182B1Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·36 cites·20 claims
0399US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
0499US9601545B1Series MIM structures compatible with RRAM processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·61 cites·20 claims
0599US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
0698US11437084B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·5 cites·20 claims
0798US10930333B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·20 cites·20 claims
0898US9847481B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 19, 2017·24 cites·20 claims
0998US9792987B1Resistive random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·35 cites·20 claims
1098US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
1198US9461245B1Bottom electrode for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·55 cites·20 claims
1298US9431604B2Resistive random access memory (RRAM) and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·29 cites·20 claims
1398US9231197B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·23 cites·20 claims
1498US9023699B2Resistive random access memory (RRAM) structure and method of making the RRAM structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·21 cites·20 claims
1598US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
1698US8669607B1Methods and apparatus for non-volatile memory cells with increased programming efficiencyTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 11, 2014·96 cites·19 claims
1797US12041861B2RRAM bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·2 cites·20 claims
1897US11944021B2Metal landing on top electrode of RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
1997US11611038B2Method for forming RRAM with a barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·3 cites·20 claims
2097US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
2197US9543511B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·22 cites·20 claims
2297US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
2396US11915754B2Resistive random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
2496US11869564B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
2596US11557344B2Resistive random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·3 cites·20 claims
2696US11362271B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
2796US10504963B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·13 cites·20 claims
2896US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
2995US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
3095US10109793B2Bottom electrode for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·11 cites·20 claims
3195US9178144B1RRAM cell with bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 3, 2015·25 cites·20 claims
3295US8896096B2Process-compatible decoupling capacitor and method for making the sameTU KUO-CHI·Filed 2012·Granted Nov 25, 2014·24 cites·18 claims
3394US11706930B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
3494US10985316B2Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·6 cites·20 claims
3594US10762960B2Resistive random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·9 cites·20 claims
3694US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
3794US10276485B2Method for forming a homogeneous bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·8 cites·20 claims
3894US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
3994US9647207B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
4094US9583556B2Process-compatible decoupling capacitor and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·11 cites·19 claims
4194US9385316B2RRAM retention by depositing Ti capping layer before HK HfOTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·12 cites·19 claims
4293US12389814B2High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·1 cites·20 claims
4393US12218005B2Integrated circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·1 cites·20 claims
4493US10516106B2Electrode structure to improve RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·7 cites·20 claims
4593US10505107B2Switching layer scheme to enhance RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
4693US9537094B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
4793US8921818B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·10 cites·20 claims
4893US8742390B1Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·15 cites·20 claims
4992US11696521B2High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
5092US11296147B2Method for manufacturing memory device having spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·8 cites·20 claims

Showing the top 50 of 278 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →