Inventor · disambiguated record
Wei-De Ho
Also filed as: HO WEI-DE
9 granted patents·16 pending applications·17 citations·filing 2015–2025
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD25
Top patents by PatentIndex Score
25 records- 0192US12119271B1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
- 0290US9786569B1Overlay measurement and compensation in semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 10, 2017·12 cites·20 claims
- 0385US11804410B2Thin-film non-uniform stress evaluationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 31, 2023·2 cites·20 claims
- 0481US2025318270A1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US9703918B2Two-dimensional process window improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·2 cites·20 claims
- 0679US2025323101A1Thin-film non-uniform stress evaluationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0776US2025204049A1Backside Gate Contact, Backside Gate Etch Stop Layer, and Methods of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0875US2025366104A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0974US2025343112A1Front side to backside interconnection for cfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1074US2025324701A1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1173US12374588B2Method for evaluating non-uniform stressTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1271US2024389353A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1369US2025329647A1Stacked transistors with vertical interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1467US2024290864A1Backside gate contact, backside gate etch stop layer, and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1566US2025233070A1Stacked transistors with vertical interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1666US2024282671A1Front Side to Backside Interconnection for CFET DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1764US12120886B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 1864US2023402528A1Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1962US11749570B2Etch monitoring and performingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 2062US2024072115A1Complementary field effect transistor with conductive through substrate layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2156US2023139799A1Pattern formation method and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2254US2025221012A1Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2354US2024213195A1Semiconductor structure with hybrid bonding and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2452US9904163B2Cut-mask patterning process for FIN-like field effect transistor (FINFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·0 cites·20 claims
- 2545US12324164B2Alignment mark for MRAM device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →