Inventor · disambiguated record

Wen-Hsing Hsieh

Also filed as: HSIEH WEN-HSING

75 granted patents·23 pending applications·821 citations·filing 2010–2025

99Inventor score

Technology areasH10D H10P H10W G06F B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD81 TAIWAN SEMICONDUCTOR MFG12 WU ZHIQIANG2 HO JON-HSU1 WANG CHIH-CHING1

Top patents by PatentIndex Score

98 records

0199US10109721B2Horizontal gate-all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·140 cites·20 claims
0299US9887269B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·151 cites·20 claims
0398US11355611B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
0498US10290546B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·131 cites·20 claims
0598US9754840B2Horizontal gate-all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·18 cites·20 claims
0697US8614127B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 24, 2013·41 cites·20 claims
0797US8338259B2Semiconductor device with a buried stressorWU ZHIQIANG·Filed 2010·Granted Dec 25, 2012·31 cites·6 claims
0896US11557659B2Gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·6 cites·20 claims
0996US8890207B2FinFET design controlling channel thicknessWU ZHIQIANG·Filed 2011·Granted Nov 18, 2014·39 cites·22 claims
1096US8497171B1FinFET method and structure with embedded underlying anti-punch through layerWu wei-hao·Filed 2012·Granted Jul 30, 2013·138 cites·20 claims
1195US11856761B2Semiconductor memory devices with different doping typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·18 claims
1294US9899387B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 20, 2018·11 cites·20 claims
1394US8765533B2Fin-like field effect transistor (FinFET) channel profile engineering method and associated deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 1, 2014·21 cites·20 claims
1493US10846456B2Integrated circuit modeling methods and systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·9 cites·20 claims
1591US11387322B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
1691US9960273B2Integrated circuit structure with substrate isolation and un-doped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·7 cites·20 claims
1790US8866235B2Source and drain dislocation fabrication in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 21, 2014·10 cites·19 claims
1888US11621343B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·1 cites·20 claims
1988US11101360B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·4 cites·20 claims
2087US12272043B2Semiconductor topography simulation of non-removal type processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·1 cites·20 claims
2187US10438851B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 8, 2019·3 cites·20 claims
2286US12218214B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·1 cites·20 claims
2386US12118707B2System and method for semiconductor topography simulationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 15, 2024·1 cites·20 claims
2486US10790280B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
2586US2025328719A1Integrated circuit device design systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2685US12317526B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
2785US9147753B2FinFET having uniform doping profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 29, 2015·7 cites·20 claims
2885US9093566B2High efficiency FinFET diodeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·5 cites·20 claims
2984US9276114B2FinFET with dual workfunction gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 1, 2016·6 cites·19 claims
3084US2025324719A1Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3183US12349393B2Semiconductor device transistor having multiple channels with different widths and materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
3283US12300749B2Source/drain features with improved strain propertiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
3383US11616151B2Channel configuration for improving multigate device performance and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·1 cites·20 claims
3483US10811509B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·2 cites·20 claims
3583US10734500B2Horizontal gate all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
3683US2024322011A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3783US2025287633A1Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3883US2025294798A1Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3982US12230681B2Semiconductor memory devices with different doping typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
4082US12040381B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
4182US8981479B2Multi-gate semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 17, 2015·5 cites·20 claims
4282US2025359229A1Semiconductor devices with asymmetric source/drain designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4381US12361199B2Integrated circuit layout generation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
4481US2025275191A1Source/drain features with improved strain propertiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4580US12396240B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
4680US12230712B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
4779US12068372B2Semiconductor device structure integrating air gaps and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·18 claims
4879US9318322B2FinFET design controlling channel thicknessTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·3 cites·20 claims
4979US9219152B2Semiconductor device with a buried stressorTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 22, 2015·4 cites·20 claims
5079US2024379761A1Semiconductor device structure integrating air gaps and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites

Showing the top 50 of 98 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →