Inventor · disambiguated record
Wen-Ching Hsu
Also filed as: HSU WEN-CHING
57 granted patents·32 pending applications·44 citations·filing 2005–2025
97Inventor score
Files withGLOBALWAFERS CO LTD32SINO AMERICAN SILICON PROD INC16CHEN MIIN JANG10SINO AMERICAN SILICON PRODUCTS4SINO-AMERICAN SILICON PRODUCTS INC4
Top patents by PatentIndex Score
89 records- 0184US10475637B2Semiconductor substrate and manufacturing method thereofGLOBALWAFERS CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·4 claims
- 0281US8742442B2Method for patterning an epitaxial substrate, a light emitting diode and a method for forming a light emitting diodeWEI CHENG-HUNG·Filed 2012·Granted Jun 3, 2014·8 cites·11 claims
- 0380US8624279B2Light emitting diode substrate and light emitting diodeTSENG BO-HSIANG·Filed 2012·Granted Jan 7, 2014·8 cites·20 claims
- 0478US9337375B2Seed used for crystalline silicon ingot castingSINO AMERICAN SILICON PROD INC·Filed 2013·Granted May 10, 2016·2 cites·2 claims
- 0578US2025372422A1Method of processing waferGLOBALWAFERS CO LTD·Filed 2025·Application pending·0 cites
- 0677US10138572B2Crystalline silicon ingot and method of fabricating the sameSINO AMERICAN SILICON PROD INC·Filed 2016·Granted Nov 27, 2018·1 cites·10 claims
- 0776US2025015143A1Novel buffer layer structure to improve gan semiconductorsGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 0875US12119382B2Buffer layer structure to improve gan semiconductorsGLOBALWAFERS CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·14 claims
- 0975US9080252B2Method of manufacturing crystalline silicon ingotLAN CHUNG-WEN·Filed 2011·Granted Jul 14, 2015·2 cites·10 claims
- 1072US11705489B2Buffer layer structure to improve GaN semiconductorsGLOBALWAFERS CO LTD·Filed 2018·Granted Jul 18, 2023·1 cites·12 claims
- 1172US9493357B2Method of fabricating crystalline silicon ingot including nucleation promotion layerYu wen-huai·Filed 2012·Granted Nov 15, 2016·1 cites·8 claims
- 1271US11708642B2Mono-crystalline silicon growth apparatusGLOBALWAFERS CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·2 claims
- 1370US9593406B2Optical device and manufacture thereofSINO-AMERICAN SILICON PRODUCTS INC·Filed 2014·Granted Mar 14, 2017·2 cites·17 claims
- 1467US12037697B2Apparatus for producing Si ingot single crystalGLOBALWAFERS CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·2 claims
- 1567US10608078B2Bonded substrate for epitaxial growth and method of forming the sameGLOBALWAFERS CO LTD·Filed 2018·Granted Mar 31, 2020·1 cites·10 claims
- 1667US7868535B2Light emitting device using phosphor powderUNIV NAT SUN YAT SEN·Filed 2007·Granted Jan 11, 2011·3 cites·14 claims
- 1766US12163247B2Method for producing silicon ingot single crystalGLOBALWAFERS CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·15 claims
- 1866US8163651B2Method of fabricating semiconductor substrate by use of heterogeneous substrate and recycling heterogeneous substrate during fabrication thereofCHEN MIIN-JANG·Filed 2008·Granted Apr 24, 2012·3 cites·7 claims
- 1966US2018312995A1Polycrystalline silicon ingotSINO AMERICAN SILICON PROD INC·Filed 2018·Application pending·0 cites
- 2065US11688628B2Method of manufacturing epitaxy substrateGLOBALWAFERS CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·15 claims
- 2165US2023282472A1Wafer and method of processing waferGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 2264US7812526B2Structure of LiAlO2 substrate having ZnO buffer layerUNIV NAT SUN YAT SEN·Filed 2007·Granted Oct 12, 2010·2 cites·3 claims
- 2363US9627197B2Composite substrate, semiconductor device including the same, and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2015·Granted Apr 18, 2017·1 cites·10 claims
- 2463US2018297851A1Multicrystalline silicon brick and silicon wafer therefromSINO AMERICAN SILICON PROD INC·Filed 2018·Application pending·0 cites
- 2562US9637391B2Crystalline silicon ingot including nucleation promotion layerSINO-AMERICAN SILICON PRODUCTS INC·Filed 2014·Granted May 2, 2017·1 cites·15 claims
- 2661US11859965B2Material analysis methodGLOBALWAFERS CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·8 claims
- 2761US9490326B2Wafer formed by slicing an ingotSINO-AMERICAN SILICON PRODUCTS INC·Filed 2015·Granted Nov 8, 2016·0 cites·2 claims
- 2861US8749002B2Structure and method form air cavity packagingWIN SEMICONDUCTORS CORP·Filed 2013·Granted Jun 10, 2014·3 cites·15 claims
- 2960US12037696B2Method for producing Si ingot single crystal, Si ingot single crystal, and apparatus thereofGLOBALWAFERS CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·17 claims
- 3060US10029919B2Multicrystalline silicon brick and silicon wafer therefromSINO AMERICAN SILICON PROD INC·Filed 2015·Granted Jul 24, 2018·0 cites·7 claims
- 3159US10825940B2Polycrystalline silicon column and polycrystalline silicon waferSINO AMERICAN SILICON PROD INC·Filed 2016·Granted Nov 3, 2020·0 cites·7 claims
- 3259US9051664B2Nanostructuring process for ingot surface, water manufacturing method, and wafer using the sameCHYAN JIUNN-YIH·Filed 2012·Granted Jun 9, 2015·0 cites·14 claims
- 3357US11923422B2Semiconductor deviceGLOBALWAFERS CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·6 claims
- 3457US10065863B2Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottomSINO AMERICAN SILICON PROD INC·Filed 2017·Granted Sep 4, 2018·0 cites·14 claims
- 3556US11201080B2Epitaxy substrate and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·14 claims
- 3656US10297702B2Polycrystalline silicon column and polycrystalline silicon waferSINO AMERICAN SILICON PROD INC·Filed 2016·Granted May 21, 2019·0 cites·14 claims
- 3755US11326272B2Mono-crystalline silicon growth apparatusGLOBALWAFERS CO LTD·Filed 2019·Granted May 10, 2022·0 cites·7 claims
- 3855US7863164B2Method of growing GaN using CVD and HVPENATIOAL SUN YAT SEN UNIVERSITY·Filed 2007·Granted Jan 4, 2011·1 cites·5 claims
- 3954US9903043B2Crucible assembly and method of manufacturing crystalline silicon ingot by use of such crucible assemblySINO AMERICAN SILICON PROD INC·Filed 2015·Granted Feb 27, 2018·0 cites·11 claims
- 4054US9315918B2Crystalline silicon ingot and method of fabricating the sameHSU SUNG-LIN·Filed 2012·Granted Apr 19, 2016·0 cites·8 claims
- 4153US2023052218A1METHOD OF SiC WAFER PROCESSINGGLOBALWAFERS CO LTD·Filed 2022·Application pending·0 cites
- 4252US2013291936A1Solar cellCHEN MIIN-JANG·Filed 2013·Application pending·0 cites
- 4351US2013181240A1Composite substrate, manufacturing method thereof and light emitting device having the sameCRYSTALWISE TECHNOLOGY INC·Filed 2013·Application pending·0 cites
- 4451US2016359005A1Semiconductor deviceGLOBALWAFERS CO LTD·Filed 2016·Application pending·0 cites
- 4550US11538681B2Epitaxy substrate and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2019·Granted Dec 27, 2022·0 cites·7 claims
- 4650US8890275B2Optoelectronic device and method of fabricating the sameCHEN MIIN-JANG·Filed 2011·Granted Nov 18, 2014·0 cites·15 claims
- 4748US11377752B2Mono-crystalline silicon growth methodGLOBALWAFERS CO LTD·Filed 2019·Granted Jul 5, 2022·0 cites·5 claims
- 4846US10388518B2Epitaxial substrate and method of manufacturing the sameGLOBALWAFERS CO LTD·Filed 2018·Granted Aug 20, 2019·0 cites·6 claims
- 4946US9109301B2Crystalline silicon formation apparatusLAN CHUNG-WEN·Filed 2009·Granted Aug 18, 2015·0 cites·11 claims
- 5046US8110739B2Solar cell and method of fabricating the sameCHEN MIIN-JANG·Filed 2007·Granted Feb 7, 2012·0 cites·10 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →