Inventor · disambiguated record
Wen-Sheh Huang
Also filed as: HUANG WEN-SHEH
30 granted patents·8 pending applications·80 citations·filing 2009–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD32TAIWAN SEMICONDUCTOR MFG2CHO HSIU-YING1LIN CHIA-PIN1TSAI CHUN HSIUNG1
Top patents by PatentIndex Score
38 records- 0196US11798848B2Semiconductor device structure with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·2 cites·20 claims
- 0295US11942390B2Thermal dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0392US11217482B2Method for forming semiconductor device with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 4, 2022·5 cites·20 claims
- 0492US10985011B2Structure and formation method of semiconductor device with resistive elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 20, 2021·6 cites·20 claims
- 0592US10304772B2Semiconductor device structure with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·7 cites·20 claims
- 0691US8557692B2FinFET LDD and source drain implant techniqueTSAI CHUN HSIUNG·Filed 2010·Granted Oct 15, 2013·15 cites·18 claims
- 0790US11404369B2Semiconductor device structure with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 2, 2022·5 cites·20 claims
- 0890US10515852B2Structure and formation method of semiconductor device with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·4 cites·20 claims
- 0988US12347770B2One-time-programmable device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·1 cites·20 claims
- 1088US11355410B2Thermal dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 1187US8034677B2Integrated method for forming high-k metal gate FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 11, 2011·9 cites·19 claims
- 1284US2025343095A1Thermal dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1383US12119262B2Semiconductor device structure with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 1483US11799001B2Back-end-of-line devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·20 claims
- 1582US12451401B2Thermal dissipation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·20 claims
- 1682US8187928B2Methods of forming integrated circuitsYu de-wei·Filed 2010·Granted May 29, 2012·8 cites·17 claims
- 1779US12040178B2Method for manufacturing semiconductor structure with resistive elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 1878US12068377B2Back-end-of-line devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 1977US8350586B2Method and apparatus of deembeddingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 8, 2013·9 cites·20 claims
- 2076US2024371757A1Structure and method of forming a semiconductor device with resistive elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2176US2024371948A1Back-End-Of-Line DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2275US11901289B2Semiconductor device structure with resistive elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2375US2025329598A1Thermal Sensor Device By Back End Of Line Metal ResistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2475US2024379541A1Nitrogen Plasma Treatment For Improving Interface Between Etch Stop Layer And Copper InterconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2575US2024387365A1One-time-programmable device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2673US12074107B2Structure and method of forming a semiconductor device with resistive elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 2772US12159830B2Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 2872US11670501B2Semiconductor device structure with resistive elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2970US12417955B2Thermal sensor device by back end of line metal resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 3067US11437313B2Structure and method of forming a semiconductor device with resistive elementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 3167US10164002B2Semiconductor device and layout methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 3266US9147020B2Transmission line characterization using EM calibrationCHO HSIU-YING·Filed 2011·Granted Sep 29, 2015·2 cites·20 claims
- 3365US12165947B2Semiconductor devices and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 3460US8796095B2Integrated method for forming metal gate FinFET devicesLIN CHIA-PIN·Filed 2011·Granted Aug 5, 2014·1 cites·18 claims
- 3558US11923295B2Interconnect level with high resistance layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·20 claims
- 3658US2025218891A1Integrated circuit (ic) structures with thermal path to carrier substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3758US2025191988A1Heat dissipation through seal ringsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3851US11532548B2Nitrogen plasma treatment for improving interface between etch stop layer and copper interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →