Inventor · disambiguated record
Weng-Hsing Huang
Also filed as: HUANG WENG-HSING
5 granted patents·7 pending applications·18 citations·filing 2001–2003
74Inventor score
Files withMACRONIX INT CO LTD5
Top patents by PatentIndex Score
12 records- 0159US6624460B1Memory device with low resistance buried bit linesMACRONIX INT CO LTD·Filed 2002·Granted Sep 23, 2003·8 cites·6 claims
- 0251US6576514B2Method of forming a three-dimensional polysilicon layer on a semiconductor waferMACRONIX INT CO LTD·Filed 2001·Granted Jun 10, 2003·5 cites·14 claims
- 0349US6710381B1Memory device structure with composite buried and raised bit lineMACRONIX INT CO LTD·Filed 2002·Granted Mar 23, 2004·4 cites·6 claims
- 0443US6777285B2Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2003·Granted Aug 17, 2004·1 cites·12 claims
- 0534US2003181049A1Method for improving reliability of STIFiled 2002·Application pending·0 cites
- 0634US2003181048A1STI method for semiconductor processesFiled 2002·Application pending·0 cites
- 0733US2002123219A1Method of forming a via of a dual damascene with low resistanceFiled 2001·Application pending·0 cites
- 0832US6673720B2Method for improving the reliability of flash memoriesMACRONIX INT CO LTD·Filed 2002·Granted Jan 6, 2004·0 cites·7 claims
- 0931US2004031983A1Structure of a memory device and fabrication method thereofFiled 2002·Application pending·0 cites
- 1030US2003181007A1Method for reducing random bit failures of flash memoriesFiled 2002·Application pending·0 cites
- 1130US2003181051A1Method of fabricating a flash memory cellFiled 2002·Application pending·0 cites
- 1230US2003181008A1Method for reducing particles and defects during flash memory fabricationFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →