Inventor · disambiguated record
Wei-Tung Huang
Also filed as: HUANG WEI · HUANG WEI-TUNG
7 granted patents·3 pending applications·18 citations·filing 2011–2025
77Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD7CHEN U-TING1HUANG WEI-TUNG1INNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD1
Top patents by PatentIndex Score
10 records- 0194US10157944B2CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·14 cites·20 claims
- 0281US2024383005A1Semiconductor device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0380US2025329577A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0474US12491536B2Semiconductor device and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·12 claims
- 0570US12368070B2LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 0665US9666619B2CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·1 cites·14 claims
- 0764US8258545B1Integrated circuit including a bipolar transistor and methods of making the sameHUANG WEI-TUNG·Filed 2011·Granted Sep 4, 2012·3 cites·20 claims
- 0847US11862721B2HEMT semiconductor device with a stepped sidewallINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Granted Jan 2, 2024·0 cites·19 claims
- 0947US2016372360A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
- 1042US9040891B2Image device and methods of forming the sameCHEN U-TING·Filed 2012·Granted May 26, 2015·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →