Inventor · disambiguated record
Wenkan Jiang
Also filed as: JIANG WENKAN
11 granted patents·3 pending applications·128 citations·filing 2012–2024
88Inventor score
Top patents by PatentIndex Score
14 records- 0197US9650723B1Large area seed crystal for ammonothermal crystal growth and method of makingSORAA INC·Filed 2014·Granted May 16, 2017·84 cites·20 claims
- 0293US10648102B2Oxygen-doped group III metal nitride and method of manufactureSLT TECH INC·Filed 2018·Granted May 12, 2020·4 cites·17 claims
- 0393US9589792B2High quality group-III metal nitride crystals, methods of making, and methods of useSORAA INC·Filed 2013·Granted Mar 7, 2017·16 cites·32 claims
- 0493US9543392B1Transparent group III metal nitride and method of manufactureSORAA INC·Filed 2014·Granted Jan 10, 2017·16 cites·22 claims
- 0589US11898269B2Oxygen-doped group III metal nitride and method of manufactureSLT TECH INC·Filed 2020·Granted Feb 13, 2024·2 cites·17 claims
- 0683US12351942B2Oxygen-doped group III metal nitride and method of manufactureSLT TECH INC·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0782US11721549B2Large area group III nitride crystals and substrates, methods of making, and methods of useSLT TECH INC·Filed 2021·Granted Aug 8, 2023·1 cites·18 claims
- 0880US10301745B2Large area, low-defect gallium-containing nitride crystals, method of making, and method of useSLT TECH INC·Filed 2016·Granted May 28, 2019·1 cites·15 claims
- 0980US2024183074A1Oxygen-doped group iii metal nitride and method of manufactureSLT TECH INC·Filed 2024·Application pending·0 cites
- 1079US11705322B2Group III nitride substrate, method of making, and method of useSLT TECH INC·Filed 2020·Granted Jul 18, 2023·1 cites·24 claims
- 1174US9275912B1Method for quantification of extended defects in gallium-containing nitride crystalsSORAA INC·Filed 2013·Granted Mar 1, 2016·3 cites·20 claims
- 1267US2023317444A1Group iii nitride substrate, method of making, and method of useSLT TECH INC·Filed 2023·Application pending·0 cites
- 1363US9404197B2Large area, low-defect gallium-containing nitride crystals, method of making, and method of useD'EVELYN MARK P·Filed 2012·Granted Aug 2, 2016·0 cites·11 claims
- 1450US2023295839A1Group iii nitride substrate and method of makingSLT TECH INC·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →