Inventor · disambiguated record
Wen-Chun Keng
Also filed as: KENG WEN-CHUN
19 granted patents·8 pending applications·20 citations·filing 2016–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD27
Top patents by PatentIndex Score
27 records- 0198US11710663B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·5 cites·20 claims
- 0297US11462282B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·7 cites·20 claims
- 0396US10943827B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 9, 2021·3 cites·20 claims
- 0495US12080602B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·1 cites·20 claims
- 0589US12380958B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 0689US2025316320A1Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0788US11257817B2Integrated chip with improved latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·2 cites·20 claims
- 0887US2024363419A1Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0986US12159924B2Structure and method for multigate devices with suppressed diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·1 cites·20 claims
- 1082US2025365912A1Epitaxial features in semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1181US2025133716A1Source/drain feature separation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1280US11942169B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 1378US10658242B2Structure and formation method of semiconductor device with Fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 1478US2025344450A1Semiconductor Device With Leakage Current Suppression And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1576US2024153949A1Integrated chip with improved latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1675US12178032B2Source/drain feature separation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 1775US11937415B2Fin-based well straps for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 1873US11908860B2Integrated chip with improved latch-up immunityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1973US2022367483A1Semiconductor device having an offset source/drain feature and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2070US12495534B2Epitaxial features in semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 2169US2025203966A1Source/drain feature for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2268US12243912B2Source/drain feature for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
- 2367US12495579B2Semiconductor device with leakage current suppression and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 2467US11690209B2Fin-based well straps for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·0 cites·20 claims
- 2567US11637109B2Source/drain feature separation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·0 cites·20 claims
- 2663US11600625B2Semiconductor device having an offset source/drain feature and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 2742US9831250B2Static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →