Inventor · disambiguated record
Wei William Lee
Also filed as: LEE WEI · LEE WEI W · LEE WEI WILLIAM
17 granted patents·439 citations·filing 1980–2002
95Inventor score
Top patents by PatentIndex Score
17 records- 0189US6351039B1Integrated circuit dielectric and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Feb 26, 2002·99 cites·4 claims
- 0287US6774489B2Dielectric layer liner for an integrated circuit structureTEXAS INSTRUMENTS INC·Filed 2001·Granted Aug 10, 2004·51 cites·10 claims
- 0384US6117741AMethod of forming a transistor having an improved sidewall gate structureTEXAS INSTRUMENTS INC·Filed 1999·Granted Sep 12, 2000·83 cites·16 claims
- 0481US4318976AHigh gel rigidity, negative electron beam resistsTEXAS INSTRUMENTS INC·Filed 1980·Granted Mar 9, 1982·37 cites·8 claims
- 0572US6383870B2Semiconductor device architectures including UV transmissive nitride layersTEXAS INSTRUMENTS INC·Filed 2001·Granted May 7, 2002·16 cites·6 claims
- 0671US6635229B1Method for low perfluorocarbon compound emissionTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 21, 2003·6 cites·16 claims
- 0768US6214423B1Method of forming a polymer on a surfaceTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 10, 2001·34 cites·4 claims
- 0864US6800928B1Porous integrated circuit dielectric with decreased surface porosityTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 5, 2004·27 cites·2 claims
- 0958US6274900B1Semiconductor device architectures including UV transmissive nitride layersTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 14, 2001·15 cites·5 claims
- 1056US6559050B1Process for high thermal stable contact formation in manufacturing sub-quarter-micron CMOS devicesTEXAS INSTRUMENTS INC·Filed 2000·Granted May 6, 2003·7 cites·9 claims
- 1154US6930028B1Antireflective structure and methodTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 16, 2005·21 cites·7 claims
- 1254US4657844APlasma developable negative resist compositions for electron beam, X-ray and optical lithographyTEXAS INSTRUMENTS INC·Filed 1985·Granted Apr 14, 1987·13 cites·1 claims
- 1350US6753559B2Transistor having improved gate structureTEXAS INSTRUMENTS INC·Filed 2001·Granted Jun 22, 2004·4 cites·10 claims
- 1449US6688344B2Container flush and gas charge system and methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 10, 2004·4 cites·19 claims
- 1546US6436746B1Transistor having an improved gate structure and method of constructionTEXAS INSTRUMENTS INC·Filed 1999·Granted Aug 20, 2002·9 cites·13 claims
- 1639US6063692AOxidation barrier composed of a silicide alloy for a thin film and method of constructionTEXAS INSTRUMENTS INC·Filed 1998·Granted May 16, 2000·6 cites·15 claims
- 1737US6307230B1Transistor having an improved sidewall gate structure and method of constructionTEXAS INSTRUMENTS INC·Filed 1999·Granted Oct 23, 2001·7 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →