Inventor · disambiguated record
Wei Ju Lee
Also filed as: LEE WEI · LEE WEI JU
29 granted patents·17 pending applications·28 citations·filing 2019–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD46
Top patents by PatentIndex Score
46 records- 0197US11532627B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·5 cites·20 claims
- 0295US11764262B2Multi-gate device with air gap spacer and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 0392US11929409B2Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·1 cites·20 claims
- 0492US11177344B2Multi-gate device with air gap spacer and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·5 cites·20 claims
- 0587US12490476B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
- 0687US12094938B2Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·1 cites·20 claims
- 0785US11489063B2Method of manufacturing a source/drain feature in a multi-gate semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·20 claims
- 0885US11476342B1Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·1 cites·20 claims
- 0985US11469332B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 11, 2022·2 cites·20 claims
- 1085US10964816B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·2 cites·20 claims
- 1183US11293897B2High sensitivity ISFET sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·3 cites·20 claims
- 1282US12300720B2Multi-gate device with air gap spacer and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1382US12148830B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1482US11037925B2Structure and method of integrated circuit having decouple capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·2 cites·20 claims
- 1581US12211790B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1681US12199170B2Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1781US11309240B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·1 cites·20 claims
- 1881US11276637B2Barrier-free interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·20 claims
- 1981US2025301711A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2080US12009408B2Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 2180US2025347650A1Miniature-Target-Detecting Transistors With Different Gate StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2280US2025347649A1Device And Method For Detecting Miniature Targets In A Fluid SampleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2378US2025351437A1Thin-Film Transistors For Detecting Miniature TargetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2478US2025347651A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2578US2024332169A1Barrier-free interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2676US2024186388A1Semiconductor device with improved source and drain contact area and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2776US2025151305A1Multi-gate devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2875US12498346B2Semiconductor structure having biosensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 2975US12349418B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 3075US11837538B2Conductive rail structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 3174US12009293B2Barrier-free interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 3274US11664451B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 3374US2024379803A1Field effect transistor with merged epitaxy backside cut and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3473US2024363702A1Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3572US2024377352A1High sensitivity isfet sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3672US2024113173A1Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3771US2024036001A1Miniature-Target-Detecting Transistors With Different Gate StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3867US11756959B2Structure and method of integrated circuit having decouple capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·20 claims
- 3966US12455259B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 4066US12385875B2BiosensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 4165US12501660B2Field effect transistor with merged epitaxy backside cut and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 16, 2025·0 cites·20 claims
- 4263US11855143B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 4362US2024038894A1Thin-Film Transistors For Detecting Miniature TargetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4458US2023408442A1Semiconductor structure having biosensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4556US2025324668A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4651US2023420506A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →