Inventor · disambiguated record
Wen-Shan Lee
Also filed as: LEE WEN-SHAN
1 granted patent·9 pending applications·0 citations·filing 2019–2024
9Inventor score
Files withVANGUARD INT SEMICONDUCT CORP10
Top patents by PatentIndex Score
10 records- 0154US2025374596A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 0252US2025374595A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 0352US2025374627A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2024·Application pending·0 cites
- 0450US2024429315A1Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0550US2025176210A1Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0648US2024266391A1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0748US2025006834A1Semiconductor device and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0848US2024178315A1Semiconductor device and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2022·Application pending·0 cites
- 0945US2024170544A1Semiconductor structure and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2022·Application pending·0 cites
- 1043US10892320B2Semiconductor devices having stacked trench gate electrodes overlapping a well regionVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Jan 12, 2021·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →