Inventor · disambiguated record
Wei-Yang Lee
Also filed as: LEE WEI-YANG
200 granted patents·97 pending applications·505 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD280TAIWAN SEMICONDUCTOR MFG5LEE WEI-YANG3UNIV NAT TAIWAN3CHAN MENG-HSUAN1
Top patents by PatentIndex Score
297 records- 0198US11935781B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·5 cites·20 claims
- 0298US11575047B2Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·3 cites·20 claims
- 0398US11189705B2Methods of reducing parasitic capacitance in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
- 0498US11189706B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·5 cites·20 claims
- 0598US10522642B2Semiconductor device with air-spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·30 cites·20 claims
- 0698US9570556B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·27 cites·20 claims
- 0797US12027626B2Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0897US11901236B2Semiconductor structure with gate-all-around devices and stacked FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 0997US11855097B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 1097US11631746B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·3 cites·20 claims
- 1197US11444178B2Inner spacer linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·6 cites·20 claims
- 1297US10868181B2Semiconductor structure with blocking layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·21 cites·20 claims
- 1397US9293534B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·27 cites·18 claims
- 1497US9287403B1FinFET and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·44 cites·19 claims
- 1596US11984489B2Air spacer for a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 1696US11798996B2Backside contact with air spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·2 cites·20 claims
- 1796US11735641B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 1896US10217815B1Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 26, 2019·10 cites·20 claims
- 1996US10153344B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·9 cites·19 claims
- 2096US9768256B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·10 cites·15 claims
- 2196US9748389B1Method for semiconductor device fabrication with improved source drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·12 cites·20 claims
- 2296US8334198B2Method of fabricating a plurality of gate structuresCHEN JIAN-HAO·Filed 2011·Granted Dec 18, 2012·50 cites·20 claims
- 2395US12021133B2Inner spacer linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 2495US11973122B2Nano-FET semiconductor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 2595US11901410B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·3 cites·20 claims
- 2695US11631736B2Epitaxial source/drain feature with enlarged lower section interfacing with backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·3 cites·20 claims
- 2795US11450559B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·3 cites·20 claims
- 2894US12087837B2Semiconductor device with backside contact and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·2 cites·20 claims
- 2994US12015060B2Structure and formation method of semiconductor device with backside contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
- 3094US11417767B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·3 cites·20 claims
- 3194US11398553B2Source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·3 cites·20 claims
- 3294US9129988B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 8, 2015·17 cites·20 claims
- 3393US12426297B2Method and structure for air gap inner spacer in gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·1 cites·20 claims
- 3493US11749719B2Source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
- 3593US11456295B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
- 3693US10867870B1Semiconductor device with funnel shape spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 3793US9812576B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·8 cites·20 claims
- 3893US9112033B2Source/drain structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·9 cites·20 claims
- 3993US8008143B2Method to form a semiconductor device having gate dielectric layers of varying thicknessesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 30, 2011·22 cites·20 claims
- 4092US12040407B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 4192US2025366012A1Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4291US11728223B2Semiconductor device and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·4 cites·20 claims
- 4391US11387322B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 4490US10497628B2Methods of forming epitaxial structures in fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·20 claims
- 4590US9865504B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·5 cites·20 claims
- 4690US9029912B2Semiconductor substructure having elevated strain material-sidewall interface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 12, 2015·8 cites·20 claims
- 4789US11374128B2Method and structure for air gap inner spacer in gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
- 4889US10396156B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·4 cites·20 claims
- 4989US8283222B2Method to form a semiconductor device having gate dielectric layers of varying thicknessHSU KUANG-YUAN·Filed 2011·Granted Oct 9, 2012·14 cites·20 claims
- 5088US12471306B2Semiconductor device active region profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
Showing the top 50 of 297 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Wei-Yang Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →