Inventor · disambiguated record
Wen Siang Lew
Also filed as: LEW WEN SIANG
8 granted patents·5 pending applications·7 citations·filing 2014–2022
76Inventor score
Top patents by PatentIndex Score
13 records- 0183US10468171B1Integrated circuits with magnetic tunnel junctions and methods of producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 5, 2019·2 cites·17 claims
- 0274US12068746B2Magnetic logic device, circuit having magnetic logic devices, and methods for controlling the magnetic logic device and the circuitUNIV NANYANG TECH·Filed 2020·Granted Aug 20, 2024·1 cites·20 claims
- 0358US9502090B2Memory device including a domain wall and ferromagnetic driver nanowireUNIV NANYANG TECH·Filed 2014·Granted Nov 22, 2016·3 cites·14 claims
- 0452US2025143195A1Non-Volatile Memory with Oxygen Scavenger Regions and Methods of Making the SameUNIV NANYANG TECH·Filed 2022·Application pending·0 cites
- 0548US10312442B2Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layersGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jun 4, 2019·0 cites·18 claims
- 0647US2024341103A1Circuit arrangement and method of forming the sameUNIV NANYANG TECH·Filed 2022·Application pending·0 cites
- 0745US10127016B2Magnetic random number generatorUNIV NANYANG TECH·Filed 2017·Granted Nov 13, 2018·0 cites·11 claims
- 0843US2024268126A1Non-volatile memory and methods of fabricating the sameUNIV NANYANG TECH·Filed 2022·Application pending·0 cites
- 0942US9431599B2Non-volatile logic deviceUNIV NANYANG TECH·Filed 2014·Granted Aug 30, 2016·1 cites·20 claims
- 1039US11751483B2Spin diode devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 5, 2023·0 cites·20 claims
- 1134US10475495B2Integrated circuits with magnetic tunnel junctions and methods of producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Nov 12, 2019·0 cites·9 claims
- 1230US2019272874A1Memory device, method of forming the same, method for controlling the same and memory arrayUNIV NANYANG TECH·Filed 2017·Application pending·0 cites
- 1319US2016064060A1Method of forming a magnetic domain wall in a nanowireUNIV NANYANG TECH·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →