Inventor · disambiguated record
Wei-Hao Liao
Also filed as: LIAO WEI-HAO
71 granted patents·36 pending applications·76 citations·filing 2011–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD99Liao wei hao3ACADEMIA SINICA2LEXTAR ELECTRONICS CORP1MIDEA GROUP CO LTD1
Top patents by PatentIndex Score
107 records- 0197US11302641B2Self-aligned cavity strucutreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·4 cites·20 claims
- 0297US11171284B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·4 cites·20 claims
- 0397US10937652B1Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·11 cites·20 claims
- 0496US12424488B2Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·2 cites·20 claims
- 0596US11798910B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·2 cites·20 claims
- 0695US11942364B2Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0795US11362030B2Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·3 cites·20 claims
- 0894US11848207B2Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·2 cites·20 claims
- 0994US10700264B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·4 cites·20 claims
- 1094US10355198B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·8 cites·20 claims
- 1192US10636963B2Magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·7 cites·20 claims
- 1291US11854965B2Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1391US10270028B1Memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·7 cites·20 claims
- 1491US2025364401A1Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1590US11521896B2Selective deposition of a protective layer to reduce interconnect structure critical dimensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 1690US10985312B2Methods of fabricating magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·2 cites·20 claims
- 1788US10461246B2Memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·4 cites·20 claims
- 1887US2025308899A1Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1986US12368046B2Method and structure of cut end with self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 2086US2025275482A1Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2186US2025349608A1Dual etch-stop layer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2286US2025308932A1Methods of Etching Metals in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2385US12354881B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2485US12302761B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2585US11798840B2Self-assembled dielectric on metal RIE lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·18 claims
- 2685US11569127B2Double patterning approach by direct metal etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·1 cites·20 claims
- 2784US11171052B2Methods of forming interconnect structures with selectively deposited pillars and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 2884US2025329638A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2983US12464954B2Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 3083US12074059B2Semiconductor arrangement and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 3183US11158518B2Methods of etching metals in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·2 cites·20 claims
- 3283US2025316532A1Self-assembled dielectric on metal rie lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3383US2025266387A1Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3482US12322723B2Self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 3581US12362231B2Self-assembled dielectric on metal rie lines to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 3681US11031284B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
- 3780US12315817B2Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3880US11854836B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·0 cites·20 claims
- 3980US10741417B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·2 cites·20 claims
- 4080US2025280735A1Structure and Method for an MRAM Device with a Multi-Layer Top ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4180US2024088022A1Sidewall spacer structure enclosing conductive wire sidewalls to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4279US12125795B2Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 4379US11856866B2Magnetic tunnel junction devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4479US2024371779A1Integrated chip with inter-wire cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4579US2025259932A1Dielectric on wire structure to increase processing window for overlying viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4678US12406924B2Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·18 claims
- 4778US12310255B2Structure and method for an MRAM device with a multi-layer top electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 4878US12243775B2Double patterning approach by direct metal etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 4978US11849645B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 5078US2025336806A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →