Inventor · disambiguated record
Wei-Jung Lin
Also filed as: LIN WEI · LIN WEI-JUNG
62 granted patents·30 pending applications·134 citations·filing 2003–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD69TAIWAN SEMICONDUCTOR MFG13LIN WEI-JUNG5INT CURRENCY TECH2ALIBABA GROUP HOLDING LTD1
Top patents by PatentIndex Score
92 records- 0196US11532561B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0295US11062941B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·3 cites·21 claims
- 0395US9230795B1Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 5, 2016·24 cites·20 claims
- 0493US10361120B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·8 cites·20 claims
- 0592US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0690US9287170B2Contact structure and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·8 cites·20 claims
- 0786US12417945B2Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·1 cites·20 claims
- 0886US9368357B2Directional pre-clean in silicide and contact formationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·4 cites·20 claims
- 0985US9589892B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 7, 2017·4 cites·20 claims
- 1085US9520327B2Methods of forming low resistance contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 13, 2016·4 cites·20 claims
- 1185US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US12288716B2Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 1384US12278188B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 1484US11101353B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·2 cites·20 claims
- 1583US12211747B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 1683US10475702B2Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·2 cites·20 claims
- 1783US9245797B2Opening fill process and structure formed therebyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·4 cites·19 claims
- 1883US9219009B2Method of integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 1983US9165838B2Methods of forming low resistance contactsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·5 cites·20 claims
- 2083US2025349616A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2183US2024379433A1Conductive feature formation and structure using bottom-up filling depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2283US2025239527A1Different Via Configurations for Different Via Interface RequirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2382US12148659B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·22 claims
- 2482US10580693B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 2582US8927418B1Systems and methods for reducing contact resistivity of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·5 cites·20 claims
- 2682US2024395874A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2781US9978583B2Opening fill process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·2 cites·20 claims
- 2881US9711402B1Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·2 cites·21 claims
- 2981US2025359230A1Semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3080US9385080B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 5, 2016·4 cites·20 claims
- 3180US2025259890A1Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3280US2025359291A1Contact plugs with reduced r/c and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3379US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 3479US12142565B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 3579US2025167047A1Method of Forming Contact MetalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3678US12020981B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 3778US8536010B2Method for making a disilicideTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 17, 2013·4 cites·20 claims
- 3877US11791208B2Method of forming contact metalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 3977US10504834B2Contact structure and the method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 4077US2025343047A1Fin field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4177US2025357191A1Conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4277US2025357348A1Barrier free tungsten liner in contact plugs and the method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4376US12002712B2Phase control in contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 4476US9624576B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·19 claims
- 4576US7768072B2Silicided metal gate for multi-threshold voltage configurationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 3, 2010·6 cites·20 claims
- 4676US2024387265A1Contact features of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4775US11676859B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 4875US8304319B2Method for making a disilicideNIEH CHUN-WEN·Filed 2010·Granted Nov 6, 2012·5 cites·9 claims
- 4975US2025324640A1Transistor source/drain contacts and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5074US11973117B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 30, 2024·0 cites·20 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →