Inventor · disambiguated record
Wei-Ken Lin
Also filed as: LIN WEI-KEN
29 granted patents·2 pending applications·46 citations·filing 2015–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD31
Top patents by PatentIndex Score
31 records- 0194US9691766B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·16 cites·13 claims
- 0291US2025366087A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0389US10340384B2Method of manufacturing fin field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 2, 2019·4 cites·20 claims
- 0489US10304677B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·5 cites·20 claims
- 0588US10497577B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 3, 2019·4 cites·20 claims
- 0683US10833170B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·2 cites·20 claims
- 0782US10797175B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·2 cites·20 claims
- 0882US10658252B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·2 cites·20 claims
- 0982US10269664B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 1081US10490650B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
- 1181US9871100B2Trench structure of semiconductor device having uneven nitrogen distribution linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
- 1279US12506001B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 1379US2024113202A1Low-K Gate Spacer and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1477US11205597B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·3 cites·17 claims
- 1577US10854713B2Method for forming trench structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·1 cites·20 claims
- 1675US11705327B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 1775US10964548B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 1874US12125908B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 1972US12464786B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 4, 2025·0 cites·20 claims
- 2071US11855182B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims
- 2171US11735430B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2271US11295948B2Low-K feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 5, 2022·0 cites·20 claims
- 2369US11450772B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 2469US11342454B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 2557US10700197B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·0 cites·20 claims
- 2656US10950431B2Low-k feature formation processes and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·19 claims
- 2755US11942418B2Semiconductor structure and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 2855US9824943B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
- 2948US10847634B2Field effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·0 cites·20 claims
- 3044US10504898B2Fin field-effect transistor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 3131US9991154B2Method for fabricating a fin field effect transistor and a shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →