Inventor · disambiguated record
Wei-Jye Lin
Also filed as: LIN WEI-JYE
5 granted patents·6 pending applications·119 citations·filing 1999–2006
82Inventor score
Files withANALOG AND POWER ELECTRONICS C3ANALOG AND POWER ELECTRICS COR1ANPEC ELECTRONICS CORP1LIAW CHORNG-WEI1LIN WEI-JYE1
Top patents by PatentIndex Score
11 records- 0187US6259618B1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRONICS C·Filed 2000·Granted Jul 10, 2001·41 cites·4 claims
- 0285US6800509B1Process for enhancement of voltage endurance and reduction of parasitic capacitance for a trench power MOSFETANPEC ELECTRONICS CORP·Filed 2003·Granted Oct 5, 2004·46 cites·12 claims
- 0361US6888203B2Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupANALOG AND POWER ELECTRICS COR·Filed 2003·Granted May 3, 2005·11 cites·6 claims
- 0458US6137122ALatch-up controllable insulated gate bipolar transistorANALOG AND POWER ELECTRONICS C·Filed 1999·Granted Oct 24, 2000·19 cites·14 claims
- 0546US7105410B2Contact process and structure for a semiconductor deviceANALOG AND POWER ELECTRONICS C·Filed 2004·Granted Sep 12, 2006·2 cites·10 claims
- 0637US2004195689A1Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact windowFiled 2004·Application pending·0 cites
- 0736US2007114601A1Gate contact structure for a power deviceLIN WEI-JYE·Filed 2006·Application pending·0 cites
- 0836US2003141555A1Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact windowFiled 2003·Application pending·0 cites
- 0936US2007181948A1ESD protection deviceLIAW CHORNG-WEI·Filed 2006·Application pending·0 cites
- 1034US2001046147A1Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startupFiled 2001·Application pending·0 cites
- 1131US2002053695A1Split buried layer for high voltage LDMOS transistorFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →