Inventor · disambiguated record
Wen Zhang Lin
Also filed as: Lin wen-zhang
12 granted patents·2 pending applications·47 citations·filing 2014–2025
87Inventor score
Top patents by PatentIndex Score
14 records- 0196US12051466B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 0294US11646079B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·4 cites·13 claims
- 0391US9431734B2Receptacle connector connected to a printed circuit boardHON HAI PREC IND CO LTD·Filed 2014·Granted Aug 30, 2016·22 cites·18 claims
- 0487US9112299B2Waterproof electrical connector and method for making the sameHON HAI PREC IND CO LTD·Filed 2014·Granted Aug 18, 2015·18 cites·17 claims
- 0587US2025364047A1Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0686US12424279B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·19 claims
- 0785US12426517B2Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0882US2025359489A1Resistive memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US12041860B2Resistive memory device and method for manufacturing with protrusion of electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1052US11943936B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 1150US9397449B2Receptacle connector flexibly connected to a mother boardHON HAI PREC IND CO LTD·Filed 2014·Granted Jul 19, 2016·1 cites·15 claims
- 1248US10770142B2Memory deviceUNIV NAT TSING HUA·Filed 2018·Granted Sep 8, 2020·0 cites·6 claims
- 1347US10607698B2Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cellUNIV NAT TSING HUA·Filed 2018·Granted Mar 31, 2020·0 cites·3 claims
- 1444US10204681B2Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cellUNIV NAT TSING HUA·Filed 2017·Granted Feb 12, 2019·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →