Inventor · disambiguated record
Wen-Chau Liu
Also filed as: LIU WEN-CHAU
18 granted patents·4 pending applications·169 citations·filing 1996–2011
93Inventor score
Files withNAT SCIENCE COUNCIL11LIU WEN-CHAU3UNIV NAT CHENG KUNG3NAT SCIENCE COUNCIL REPUBLIC CHINA2NAT SCIENCE COUNSEL OF REPUBLI1
Top patents by PatentIndex Score
22 records- 0182US6293137B1Hydrogen sensorNAT SCIENCE COUNCIL·Filed 2000·Granted Sep 25, 2001·50 cites·12 claims
- 0270US6160278AHydrogen-sensitive palladium (PD) membrane/semiconductor schottky diode sensorNAT SCIENCE COUNCIL·Filed 1999·Granted Dec 12, 2000·33 cites·14 claims
- 0368US6459103B1Negative-differential-resistance heterojunction bipolar transistor with topee-shaped current-voltage characteristicsNAT SCIENCE COUNCIL·Filed 2000·Granted Oct 1, 2002·15 cites·47 claims
- 0466US8330169B2Multi-gas sensor and method of fabricating the sensorLIU WEN-CHAU·Filed 2011·Granted Dec 11, 2012·2 cites·18 claims
- 0560US6465815B2High-breakdown voltage heterostructure field-effect transistor for high temperature operationsNAT SCIENCE COUNCIL·Filed 2000·Granted Oct 15, 2002·10 cites·26 claims
- 0654US6118136ASuperlatticed negative-differential-resistance functional transistorNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1998·Granted Sep 12, 2000·15 cites·12 claims
- 0753US6800499B2Process for preparing a hydrogen sensorNAT SCIENCE COUNCIL·Filed 2002·Granted Oct 5, 2004·7 cites·36 claims
- 0846US6969900B2Semiconductor diode capable of detecting hydrogen at high temperaturesUNIV NAT CHENG KUNG·Filed 2004·Granted Nov 29, 2005·0 cites·25 claims
- 0945US5828077ALong-period superlattice resonant tunneling transistorNAT SCIENCE COUNCIL·Filed 1997·Granted Oct 27, 1998·10 cites·9 claims
- 1044US2004113216A1Semiconductor diode capable of detecting hydrogen at high temperaturesUNIV NAT CHENG KUNG·Filed 2003·Application pending·0 cites
- 1135US5701020APseudomorphic step-doped-channel field-effect transistorNAT SCIENCE COUNCIL·Filed 1997·Granted Dec 23, 1997·5 cites·8 claims
- 1234US6188081B1Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) deviceFiled 1998·Granted Feb 13, 2001·5 cites·8 claims
- 1334US5789771ACamel-gate field-effect transistor with multiple modulation-doped channelsNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1996·Granted Aug 4, 1998·6 cites·4 claims
- 1433US6791126B2Heterojunction bipolar transistor with zero conduction band discontinuityUNIV NAT CHENG KUNG·Filed 2003·Granted Sep 14, 2004·0 cites·16 claims
- 1533US5977572ALow offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistorNAT SCIENCE COUNCIL·Filed 1997·Granted Nov 2, 1999·5 cites·2 claims
- 1633US5838030AGaInP/GaInAs/GaAs modulation-compositioned channel field-effect transistorNAT SCIENCE COUNCIL·Filed 1997·Granted Nov 17, 1998·4 cites·12 claims
- 1729US2011290003A1Gas sensor with a zinc-oxide nanostructure and method for producing the sameLIU WEN-CHAU·Filed 2011·Application pending·0 cites
- 1829US2001049184A1Process for preparing a hydrogen sensorFiled 2000·Application pending·0 cites
- 1928US5831297AStructure of metal-insulator-semiconductor-like mutiple-negative-differential-resistance deviceNAT SCIENCE COUNCIL·Filed 1997·Granted Nov 3, 1998·1 cites·7 claims
- 2028US2011284931A1transistor device and manufacture methodLIU WEN-CHAU·Filed 2011·Application pending·0 cites
- 2127US6197622B1Structure of metal-insulator-semiconductor-like multiple-negative-differential-resistance device and fabrication method thereofNAT SCIENCE COUNCIL·Filed 1998·Granted Mar 6, 2001·0 cites·6 claims
- 2221US5698862AStructure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)NAT SCIENCE COUNSEL OF REPUBLI·Filed 1996·Granted Dec 16, 1997·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →