Inventor · disambiguated record
Wei-Yuan Lu
Also filed as: LU WEI · LU WEI-YUAN
67 granted patents·11 pending applications·259 citations·filing 2002–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD52TAIWAN SEMICONDUCTOR MFG8LU WEI-YUAN5CHE CHI MING3FUNG KA-HING2
Top patents by PatentIndex Score
78 records- 0198US11791335B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·4 cites·20 claims
- 0298US11616142B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·4 cites·20 claims
- 0397US9293534B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·27 cites·18 claims
- 0496US11784222B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 0596US10153344B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·9 cites·19 claims
- 0696US9768256B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·10 cites·15 claims
- 0795US12080759B2Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 0895US11195951B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·8 cites·20 claims
- 0995US10325911B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 18, 2019·9 cites·20 claims
- 1095US8502316B2Self-aligned two-step STI formation through dummy poly removalFUNG KA-HING·Filed 2010·Granted Aug 6, 2013·23 cites·20 claims
- 1194US11355641B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 7, 2022·2 cites·20 claims
- 1293US11018134B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 25, 2021·6 cites·20 claims
- 1393US8053344B1Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·13 cites·19 claims
- 1492US12015090B2Lightly-doped channel extensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·1 cites·20 claims
- 1592US11489078B2Lightly-doped channel extensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·2 cites·20 claims
- 1692US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
- 1792US10510762B2Source and drain formation technique for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·9 cites·20 claims
- 1890US10840243B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·4 cites·20 claims
- 1989US11167268B2Catalyst and method for manufacturing the same and method for hydrogenating aromatic epoxy compoundUNIV NAT TSING HUA·Filed 2019·Granted Nov 9, 2021·2 cites·19 claims
- 2089US10950730B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·3 cites·20 claims
- 2189US7026480B2Organometallic light-emitting materialUNIV HONG KONG·Filed 2002·Granted Apr 11, 2006·38 cites·5 claims
- 2288US10446669B2Source and drain surface treatment for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 15, 2019·4 cites·20 claims
- 2388US9299803B2Method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 29, 2016·14 cites·20 claims
- 2488US8754477B2Semiconductor device with multiple stress structures and method of forming the sameLU WEI-YUAN·Filed 2011·Granted Jun 17, 2014·10 cites·20 claims
- 2587US2025318257A1Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2686US8580641B2Techniques providing high-k dielectric metal gate CMOSLU WEI-YUAN·Filed 2011·Granted Nov 12, 2013·7 cites·12 claims
- 2786US2025351483A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2884US12125879B2Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 2984US11798941B2Semiconductor device having an upper epitaxial layer contacting two lower epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 24, 2023·1 cites·20 claims
- 3084US2024379762A1Epitaxial source/drain structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3183US12136673B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 3283US2024258429A1Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3382US12356707B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3482US8828817B2Semiconductor device and method of forming the sameLU WEI-YUAN·Filed 2012·Granted Sep 9, 2014·5 cites·20 claims
- 3580US11824121B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 21, 2023·0 cites·20 claims
- 3679US11961912B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 3778US9698054B2Strained structure of a p-type field effect transistorCHENG CHUN-FAI·Filed 2011·Granted Jul 4, 2017·3 cites·20 claims
- 3878US2024371930A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3978US2024339544A1Lightly-doped channel extensionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4077US12154902B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
- 4177US9583342B2FinFET doping methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·2 cites·20 claims
- 4275US2024395811A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4374US11211455B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 4473US9178063B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·2 cites·20 claims
- 4572US9099346B2Techniques providing high-k dielectric metal gate CMOSTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 4, 2015·2 cites·20 claims
- 4672US8815722B2Methods of forming integrated circuitsFUNG KA-HING·Filed 2011·Granted Aug 26, 2014·2 cites·20 claims
- 4771US12408363B2Semiconductor device with phosphorus-doped epitaxial featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 4871US8535998B2Method for fabricating a gate structureHING FUNG KA·Filed 2010·Granted Sep 17, 2013·4 cites·19 claims
- 4971US8368147B2Strained semiconductor device with recessed channelTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·3 cites·12 claims
- 5070US8809918B2MOSFETs with multiple dislocation planesLU WEI-YUAN·Filed 2011·Granted Aug 19, 2014·2 cites·15 claims
Showing the top 50 of 78 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →