Inventor · disambiguated record
Werner Robl
Also filed as: ROBL WERNER · ROBL WERNER K
25 granted patents·8 pending applications·173 citations·filing 2001–2020
94Inventor score
Files withINFINEON TECHNOLOGIES AG17INFINEON TECHNOLOGIES AUSTRIA AG3BARTH HANS-JOACHIM2INFINEON TECHNOLOGIES CORP2STEINER RAINER2
Top patents by PatentIndex Score
33 records- 0194US8148257B1Semiconductor structure and method for making sameBARTH HANS-JOACHIM·Filed 2010·Granted Apr 3, 2012·24 cites·6 claims
- 0294US6720212B2Method of eliminating back-end rerouting in ball grid array packagingINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 13, 2004·96 cites·11 claims
- 0383US8338317B2Method for processing a semiconductor wafer or die, and particle deposition deviceENGELHARDT MANFRED·Filed 2011·Granted Dec 25, 2012·7 cites·19 claims
- 0477US6734097B2Liner with poor step coverage to improve contact resistance in W contactsINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 11, 2004·27 cites·14 claims
- 0570US8330274B2Semiconductor structure and method for making sameBARTH HANS-JOACHIM·Filed 2010·Granted Dec 11, 2012·2 cites·17 claims
- 0667US10741402B2Electronic device, electronic module and methods for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 11, 2020·1 cites·13 claims
- 0765US6866943B2Bond pad structure comprising tungsten or tungsten compound layer on top of metallization levelINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 15, 2005·10 cites·18 claims
- 0863US11615963B2Electronic device, electronic module and methods for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 28, 2023·0 cites·20 claims
- 0963US7909978B2Method of making an integrated circuit including electrodeposition of metallic chromiumINFINEON TECHNOLOGIES AG·Filed 2007·Granted Mar 22, 2011·0 cites·16 claims
- 1062US8334202B2Device fabricated using an electroplating processPOHL JENS·Filed 2009·Granted Dec 18, 2012·2 cites·16 claims
- 1159US8665054B2Semiconductor component with coreless transformerSTECHER MATTHIAS·Filed 2012·Granted Mar 4, 2014·1 cites·30 claims
- 1257US11171049B2Semiconductor device and a method of forming the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Nov 9, 2021·0 cites·19 claims
- 1353US10648096B2Electrolyte, method of forming a copper layer and method of forming a chipINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 12, 2020·0 cites·20 claims
- 1453US8786085B2Semiconductor structure and method for making sameINFINEON TECHNOLOGIES AG·Filed 2012·Granted Jul 22, 2014·0 cites·19 claims
- 1553US2008257744A1Method of making an integrated circuit including electrodeposition of aluminiumINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 1652US10446469B2Semiconductor device having a copper element and method of forming a semiconductor device having a copper elementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 15, 2019·0 cites·15 claims
- 1752US8759207B2Semiconductor structure and method for making sameINFINEON TECHNOLOGIES AG·Filed 2012·Granted Jun 24, 2014·0 cites·35 claims
- 1849US10332793B2Self-organizing barrier layer disposed between a metallization layer and a semiconductor regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 25, 2019·0 cites·17 claims
- 1948US7974120B2Spin deviceINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jul 5, 2011·0 cites·27 claims
- 2048US6794282B2Three layer aluminum deposition process for high aspect ratio CL contactsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 21, 2004·3 cites·35 claims
- 2146US11276624B2Semiconductor device power metallization layer with stress-relieving heat sink structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 15, 2022·0 cites·13 claims
- 2245US2016343662A1Semiconductor structure and method for making sameINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 2344US9425146B2Semiconductor structure and method for making sameFISCHER THOMAS·Filed 2010·Granted Aug 23, 2016·0 cites·20 claims
- 2442US9418937B2Integrated circuit and method of forming an integrated circuitDETZEL THOMAS·Filed 2011·Granted Aug 16, 2016·0 cites·17 claims
- 2541US8072071B2Semiconductor device including conductive elementSTEINER RAINER·Filed 2009·Granted Dec 6, 2011·0 cites·21 claims
- 2640US2019221533A1Semiconductor devices comprising metallizations composed of porous copper and associated production methodsINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
- 2738US2006001162A1Nitride and polysilicon interface with titanium layerSCHUTZ RONALD J·Filed 2005·Application pending·0 cites
- 2837US6943114B2Integration scheme for metal gap fill, with fixed abrasive CMPINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 13, 2005·0 cites·7 claims
- 2936US2003186551A1Integration scheme for metal gap fill with HDP and fixed abrasive CMPINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
- 3036US2014242374A1Porous Metal CoatingINFINEON TECHNOLOGIES AG·Filed 2013·Application pending·0 cites
- 3135US6960306B2Low Cu percentages for reducing shorts in AlCu linesIBM·Filed 2002·Granted Nov 1, 2005·0 cites·10 claims
- 3234US2004155268A1Method and apparatus for improving the electrical resistance of conductive pathsINFINEON TECHNOLOGIES CORP·Filed 2003·Application pending·0 cites
- 3330US2011291256A1Method for Fabricating a Semiconductor Chip Package and Semiconductor Chip PackageSTEINER RAINER·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →