Inventor · disambiguated record

Werner Schustereder

Also filed as: SCHUSTEREDER WERNER

57 granted patents·9 pending applications·83 citations·filing 2012–2024

97Inventor score

Technology areasH10P H10D H01L G01N H01J

Files withINFINEON TECHNOLOGIES AG55 INFINEON TECHNOLOGIES AUSTRIA AG9 NEIDHART THOMAS1 SCHULZE HANS-JOACHIM1

Top patents by PatentIndex Score

66 records

0193US9613805B1Method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 4, 2017·9 cites·22 claims
0292US10903078B2Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·9 cites·28 claims
0391US9012980B1Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·11 cites·20 claims
0487US9564495B2Semiconductor device with a semiconductor body containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 7, 2017·4 cites·7 claims
0587US9105487B2Super junction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 11, 2015·6 cites·18 claims
0686US8710620B2Method of manufacturing semiconductor devices using ion implantationSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 29, 2014·6 cites·15 claims
0785US10109489B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 23, 2018·3 cites·26 claims
0885US9558948B1Laser thermal annealing of deep doped region using structured antireflective coatingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jan 31, 2017·4 cites·20 claims
0981US11171230B2Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Nov 9, 2021·2 cites·11 claims
1079US9972704B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 15, 2018·2 cites·16 claims
1178US10128328B2Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 13, 2018·2 cites·23 claims
1278US9825131B2Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 21, 2017·2 cites·17 claims
1377US11195695B2Ion implantation method, ion implantation apparatus and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 7, 2021·2 cites·13 claims
1477US10074715B2Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 11, 2018·2 cites·19 claims
1575US10096677B2Methods for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 9, 2018·2 cites·19 claims
1675US9812563B2Transistor with field electrodes and improved avalanche breakdown behaviorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 7, 2017·2 cites·21 claims
1774US10679855B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·1 cites·17 claims
1874US10529838B2Semiconductor device having a variable carbon concentrationINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 7, 2020·1 cites·20 claims
1974US10366895B2Methods for forming a semiconductor device using tilted reactive ion beamINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 30, 2019·1 cites·9 claims
2074US10192955B2Semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 29, 2019·1 cites·17 claims
2174US9312135B2Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defectsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 12, 2016·2 cites·16 claims
2272US12512321B2Method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Granted Dec 30, 2025·0 cites·17 claims
2371US10083835B2Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structuresINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 25, 2018·1 cites·23 claims
2471US8859409B2Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor bodyNEIDHART THOMAS·Filed 2012·Granted Oct 14, 2014·3 cites·16 claims
2569US10573533B2Method of reducing a sheet resistance in an electronic device, and an electronic deviceINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 25, 2020·1 cites·13 claims
2669US10037887B2Method for implanting ions into a semiconductor substrate and an implantation systemINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 31, 2018·1 cites·16 claims
2768US9859361B2SiC-based superjunction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·1 cites·13 claims
2867US11764296B2Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 19, 2023·0 cites·18 claims
2967US9412824B2Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complexINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 9, 2016·1 cites·17 claims
3067US9390883B2Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 12, 2016·1 cites·7 claims
3166US11342187B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted May 24, 2022·0 cites·8 claims
3262US10998402B2Semiconductor devices with steep junctions and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 4, 2021·0 cites·20 claims
3360US12463037B2Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Nov 4, 2025·0 cites·23 claims
3459US11250966B2Apparatus and method for neutron transmutation doping of semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 15, 2022·0 cites·16 claims
3558US12500086B2Method of manufacturing a metal silicide layer above a silicon carbide substrate, and semiconductor device comprising a metal silicide layerINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
3658US10317338B2Method and assembly for determining the carbon content in siliconINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jun 11, 2019·0 cites·26 claims
3758US2025014902A1Method of manufacturing a semiconductor device including ion implantation processesINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
3857US10679857B2Vertical transistor with trench gate insulator having varying thicknessINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jun 9, 2020·0 cites·19 claims
3956US11557506B2Methods for processing a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 17, 2023·0 cites·19 claims
4056US10615039B2Semiconductor device having a device doping region of an electrical device arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·0 cites·19 claims
4155US10475881B2Semiconductor devices with steep junctions and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·0 cites·21 claims
4255US2023087353A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
4355US2024055257A1Method for manufacturing a contact on a silicon carbide substrate, and silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
4455US2024145588A1Vertical power semiconductor device including a silicon carbide (sic) semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
4554US9809877B2Ion implantation apparatus with ion beam directing unitINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 7, 2017·0 cites·5 claims
4653US11764063B2Silicon carbide device with compensation region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 19, 2023·0 cites·22 claims
4753US10541301B2SiC-based superjunction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 21, 2020·0 cites·14 claims
4853US9960044B2Semiconductor device and methods for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 1, 2018·0 cites·21 claims
4953US9627209B2Method for producing a semiconductorINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 18, 2017·0 cites·20 claims
5053US9293330B2Method for producing a semiconductorINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 22, 2016·0 cites·13 claims

Showing the top 50 of 66 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →